S-1000C25-N4T1U

Basic Information Overview

Category: Electronic Component
Use: Power Amplifier
Characteristics: High power output, compact size
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Model Number: S-1000C25-N4T1U
• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current (Ic): 1A
• Maximum Collector-Emitter Voltage (Vce): 25V
• Maximum Power Dissipation (Pd): 500mW
• DC Current Gain (hfe): 100 - 300
• Transition Frequency (ft): 150MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-1000C25-N4T1U transistor has three pins:

1. Collector (C): This pin is connected to the positive terminal of the power supply.
2. Base (B): The base pin controls the flow of current between the collector and emitter.
3. Emitter (E): The emitter pin is connected to the negative terminal of the power supply.

Functional Features

• High power amplification capability
• Low noise and distortion
• Fast switching speed
• Wide operating temperature range
• Small form factor for space-constrained applications

Advantages and Disadvantages

Advantages: - High power output for its compact size - Low noise and distortion ensure high-quality audio amplification - Fast switching speed allows for efficient signal processing - Wide operating temperature range enables reliable performance in various environments

Disadvantages: - Limited maximum collector current (1A) - Restricted maximum collector-emitter voltage (25V) - Relatively low power dissipation capability (500mW)

Working Principles

The S-1000C25-N4T1U transistor operates based on the principles of bipolar junction transistors. It consists of three layers: the emitter, base, and collector. By applying a small current to the base pin, the transistor allows a larger current to flow between the collector and emitter pins. This amplification effect is utilized in power amplifier circuits to boost the strength of electrical signals.

Detailed Application Field Plans

The S-1000C25-N4T1U transistor finds applications in various fields, including:

1. Audio Amplifiers: Due to its high power output and low distortion characteristics, it is commonly used in audio amplifiers for home theaters, car audio systems, and professional sound equipment.
2. RF Communication Systems: The transistor's fast switching speed and wide operating temperature range make it suitable for RF communication devices such as wireless routers, walkie-talkies, and cellular base stations.
3. Industrial Automation: Its compact size and reliable performance make it ideal for use in industrial automation systems, including motor control, robotics, and process control.

Detailed and Complete Alternative Models

1. S-1000C30-N4T1U: Similar to S-1000C25-N4T1U but with a higher maximum collector-emitter voltage of 30V.
2. S-1000C20-N4T1U: Similar to S-1000C25-N4T1U but with a lower maximum collector-emitter voltage of 20V.
3. S-1000C25-P4T1U: Similar to S-1000C25-N4T1U but with a different package type (TO-92) for through-hole mounting.

(Note: The above alternative models are provided for reference and may have slight variations in specifications.)

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