S-1000C36-N4T1G

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Model Number: S-1000C36-N4T1G
• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current: 1A
• Collector-Emitter Voltage: 36V
• Power Dissipation: 625mW
• Operating Frequency: Up to 1GHz
• Gain-Bandwidth Product: 2.5GHz
• Noise Figure: 2dB
• Package Type: SOT-23

Detailed Pin Configuration

The S-1000C36-N4T1G transistor has three pins:

1. Emitter (E): Connected to the ground or reference potential.
2. Base (B): Controls the flow of current between the collector and emitter.
3. Collector (C): Collects the current flowing through the base-emitter junction.

Functional Features

• High gain amplification of weak signals.
• Low noise figure for improved signal quality.
• Wide operating frequency range up to 1GHz.
• Suitable for various applications requiring signal amplification.
• Compact SMD package for space-constrained designs.
• Reliable performance and long-term stability.

Advantages

• Provides high gain amplification, enhancing signal strength.
• Low noise figure ensures minimal distortion in amplified signals.
• Wide operating frequency range allows for versatile applications.
• Small SMD package enables integration into compact electronic devices.
• Reliable performance ensures consistent signal amplification.

Disadvantages

• Limited maximum collector current of 1A may restrict certain high-power applications.
• Collector-emitter voltage limited to 36V, not suitable for high-voltage circuits.
• Power dissipation of 625mW may require additional heat dissipation measures in some cases.

Working Principles

The S-1000C36-N4T1G transistor operates based on the principles of bipolar junction transistors. It consists of three layers: the emitter, base, and collector. By applying a small current or voltage to the base terminal, the transistor allows a larger current to flow between the collector and emitter terminals. This amplification effect enables the transistor to boost weak signals while maintaining signal integrity.

Detailed Application Field Plans

The S-1000C36-N4T1G transistor finds application in various fields, including:

1. Wireless Communication: Used in RF (Radio Frequency) amplifiers for wireless communication systems such as cellular networks, Wi-Fi routers, and Bluetooth devices.
2. Audio Amplification: Employed in audio amplifiers to enhance the strength of audio signals in devices like speakers, headphones, and audio receivers.
3. Sensor Interfaces: Utilized in sensor interface circuits to amplify weak sensor signals before further processing or transmission.
4. Medical Devices: Integrated into medical equipment for amplifying biomedical signals, such as ECG (Electrocardiogram) and EEG (Electroencephalogram) signals.
5. Industrial Automation: Applied in industrial automation systems for amplifying control signals and sensor outputs.

Detailed and Complete Alternative Models

1. S-9018C36-N4T1G
2. S-8050C36-N4T1G
3. S-8550C36-N4T1G
4. S-9014C36-N4T1G
5. S-9012C36-N4T1G
6. S-9013C36-N4T1G
7. S-8050C36-N4T1G

(Note: The above list is not exhaustive and serves as an example of alternative models.)

This entry provides a comprehensive overview of the S-1000C36-N4T1G transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.