AT45DB041E-SSHN2B-T

Product Overview

Category

AT45DB041E-SSHN2B-T belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The AT45DB041E-SSHN2B-T retains stored data even when power is removed.
• High capacity: This flash memory device has a storage capacity of 4 megabits (512 kilobytes).
• Fast data transfer: It supports high-speed serial interface for efficient data transfer.
• Low power consumption: The AT45DB041E-SSHN2B-T operates at low power levels, making it suitable for battery-powered devices.

Package

The AT45DB041E-SSHN2B-T is available in an industry-standard 8-pin Small-Outline No-Lead (SON) package.

Essence

This flash memory device provides reliable and compact storage solutions for electronic devices, ensuring data integrity and fast access times.

Packaging/Quantity

The AT45DB041E-SSHN2B-T is typically packaged in reels, with 2500 units per reel.

Specifications

• Storage Capacity: 4 megabits (512 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Data Retention: Up to 20 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. Chip Select (/CS)
2. Serial Clock (SCK)
3. Serial Data Input/Output (SI/O)
4. Write Protect (/WP)
5. Reset (/RESET)
6. Ground (GND)
7. Power Supply (VCC)
8. Serial Data Output (SO)

Functional Features

• Page Program Operation: Allows data to be programmed in page mode, enhancing write performance.
• Continuous Read Mode: Enables sequential reading of data from multiple pages without the need for readdressing.
• Sector Erase Capability: Provides the ability to erase large blocks of memory for efficient data management.
• Software Protection: Supports software protection mechanisms to prevent unauthorized access to stored data.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast data transfer speeds for efficient operation.
• Low power consumption, suitable for battery-powered devices.
• Compact package size for space-constrained designs.
• Long data retention period ensures data integrity.

Disadvantages

• Limited storage capacity compared to higher-end flash memory devices.
• Requires an external microcontroller or host device for interfacing and control.

Working Principles

The AT45DB041E-SSHN2B-T utilizes a combination of floating gate and control gate transistors to store data as electrical charges. These charges are trapped within the floating gate, representing binary values (0s and 1s). The state of each memory cell can be read, programmed, or erased using appropriate voltage levels and control signals.

Detailed Application Field Plans

The AT45DB041E-SSHN2B-T is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players utilize this flash memory for storing operating systems, applications, and user data.
2. Digital Cameras: Used for storing captured images and videos.
3. Automotive Systems: Integrated into infotainment systems, navigation units, and instrument clusters for data storage purposes.
4. Industrial Control Systems: Employed in automation equipment, sensors, and data loggers for storing critical information.
5. Consumer Electronics: Gaming consoles, e-readers, and audio players utilize this flash memory for data storage.

Detailed and Complete Alternative Models

1. AT45DB081E-SSHN2B-T: Offers double the storage capacity (8 megabits) compared to AT45DB041E-SSHN2B-T.
2. AT45DB161E-SSHN2B-T: Provides even higher storage capacity (16 megabits) for applications requiring more memory.
3. AT45DB321E-SSHN2B-T: Offers a substantial increase in storage capacity (32 megabits) for demanding data storage needs.

These alternative models provide options with varying storage capacities to cater to different application requirements.

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