AS4C128M8D3B-12BCN

Product Overview

Category

AS4C128M8D3B-12BCN belongs to the category of computer memory modules.

Use

It is used as a Random Access Memory (RAM) module in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• Capacity: 128 Megabits (16 Megabytes)
• Organization: 8 Meg x 8 bits
• Speed: 12 nanoseconds
• Voltage: 3.3 volts
• Package Type: BGA (Ball Grid Array)
• Essence: High-speed and high-density memory module

Packaging/Quantity

AS4C128M8D3B-12BCN is typically packaged in trays or reels. The quantity per package depends on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Interface: Parallel
• Clock Frequency: 83.33 MHz
• Operating Temperature Range: -40°C to +85°C
• Refresh Mode: Auto-refresh and self-refresh
• Power Supply: VDD = 3.3V ± 0.3V
• CAS Latency: 3

Detailed Pin Configuration

The AS4C128M8D3B-12BCN module has a total of 66 pins. Here is the detailed pin configuration:

1. VSS (Ground)
2. DQ0 (Data Input/Output Bit 0)
3. DQ1 (Data Input/Output Bit 1)
4. DQ2 (Data Input/Output Bit 2)
5. DQ3 (Data Input/Output Bit 3)
6. DQ4 (Data Input/Output Bit 4)
7. DQ5 (Data Input/Output Bit 5)
8. DQ6 (Data Input/Output Bit 6)
9. DQ7 (Data Input/Output Bit 7)
10. VDD (Power Supply)
11. /CAS (Column Address Strobe)
12. /RAS (Row Address Strobe)
13. /WE (Write Enable)
14. /CS (Chip Select)
15. /CKE (Clock Enable)
16. A0 (Address Bit 0)
17. A1 (Address Bit 1)
18. A2 (Address Bit 2)
19. A3 (Address Bit 3)
20. A4 (Address Bit 4)
21. A5 (Address Bit 5)
22. A6 (Address Bit 6)
23. A7 (Address Bit 7)
24. A8 (Address Bit 8)
25. A9 (Address Bit 9)
26. A10 (Address Bit 10)
27. A11 (Address Bit 11)
28. A12 (Address Bit 12)
29. A13 (Address Bit 13)
30. A14 (Address Bit 14)
31. A15 (Address Bit 15)
32. A16 (Address Bit 16)
33. A17 (Address Bit 17)
34. A18 (Address Bit 18)
35. A19 (Address Bit 19)
36. A20 (Address Bit 20)
37. A21 (Address Bit 21)
38. A22 (Address Bit 22)
39. A23 (Address Bit 23)
40. VCCQ (Power Supply for Output Buffers) 41-66. NC (No Connection)

Functional Features

• High-speed data transfer rate
• Low power consumption
• Easy integration into various electronic systems
• Reliable and stable performance
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• High storage capacity
• Low latency
• Suitable for multitasking and memory-intensive applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity

Working Principles

AS4C128M8D3B-12BCN operates based on Synchronous Dynamic Random Access Memory (SDRAM) technology. It stores digital data in a matrix of capacitors, organized into rows and columns. The memory controller sends row and column addresses to access specific data stored in the memory cells. The synchronous nature of SDRAM allows for faster data transfer rates by synchronizing with the system clock.

Detailed Application Field Plans

AS4C128M8D3B-12BCN is widely used in various applications, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Industrial automation systems 6. Medical devices 7. Automotive electronics 8. Consumer electronics

Detailed and Complete Alternative Models

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