BLF10M6160U

Product Overview

Category: Semiconductor
Use: RF Power Transistor
Characteristics: High power, high frequency
Package: SOT539A
Essence: Gallium Nitride (GaN) technology
Packaging/Quantity: Tape and reel, 800 units

Specifications

• Frequency Range: 960-1215 MHz
• Output Power: 60W
• Efficiency: 70%
• Gain: 17dB
• Voltage: 50V
• Current: 14A
• Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

1. Gate
2. Drain
3. Source
4. Ground

Functional Features

• High power density
• Broadband performance
• High efficiency
• Excellent thermal stability

Advantages and Disadvantages

Advantages: - High power output - Wide frequency range - Compact package size

Disadvantages: - Higher cost compared to traditional transistors - Sensitive to voltage spikes

Working Principles

The BLF10M6160U utilizes GaN technology to efficiently amplify radio frequency signals. When a voltage is applied to the gate terminal, it creates an electric field in the channel, allowing current to flow from the drain to the source, amplifying the input signal.

Detailed Application Field Plans

The BLF10M6160U is ideal for use in high-power RF applications such as base stations, radar systems, and industrial heating equipment. Its high efficiency and wide frequency range make it suitable for various communication and industrial applications.

Detailed and Complete Alternative Models

1. BLF888A - RF Power Transistor, 80W, 30-512 MHz
2. BLF578XR - RF Power Transistor, 600W, 470-860 MHz
3. BLF2425M8L - RF Power Transistor, 25W, 2400-2500 MHz

This completes the entry for BLF10M6160U, providing comprehensive information on its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.