BLF544,112

Product Information

Belongs to: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals - Characteristics: High power, high frequency operation - Package: SOT539A - Essence: N-channel enhancement mode Lateral MOS transistor - Packaging/Quantity: Tape and reel, 800 units per reel

Specifications: - Frequency Range: 470-860 MHz - Output Power: 40 W - Gain: 17.5 dB - Efficiency: 30% - Voltage: 28 V - Current: 14 A

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain

Functional Features: - High gain and efficiency - Excellent linearity - Integrated ESD protection - Thermally enhanced package for improved reliability

Advantages: - High power output - Wide frequency range - Enhanced reliability due to integrated protection features

Disadvantages: - Higher cost compared to some alternative models - Requires careful thermal management due to high power operation

Working Principles: The BLF544,112 operates on the principle of amplifying radio frequency signals using a N-channel enhancement mode Lateral MOS transistor. When a signal is applied to the gate, it modulates the conductivity of the channel between the source and drain, resulting in amplification of the input signal.

Detailed Application Field Plans: - Broadcast transmitters - Cellular base stations - Radar systems - Industrial heating equipment

Detailed and Complete Alternative Models: - BLF578XR: Similar power and frequency range - BLF888A: Lower cost alternative with slightly reduced performance - BLF2425M7L: Higher power alternative for specific applications

Note: The above information is for reference purposes only. Always refer to the official datasheet for accurate specifications and details.

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