BLF573,112 Encyclopedia Entry

Product Overview

BLF573,112 belongs to the category of high-power RF transistors. It is commonly used in radio frequency (RF) power amplifiers for various applications such as wireless communication, radar systems, and broadcasting. The transistor exhibits high power gain, efficiency, and ruggedness, making it suitable for demanding RF power amplifier designs. BLF573,112 is typically packaged in a metal-ceramic package and is available in various quantities.

Specifications

• Frequency Range: 470 - 860 MHz
• Output Power: 50W
• Gain: 16 dB
• Efficiency: 30%
• Package Type: Metal-Ceramic

Detailed Pin Configuration

The BLF573,112 transistor features a 3-pin configuration: 1. Pin 1: RF Input 2. Pin 2: DC Bias 3. Pin 3: RF Output

Functional Features

• High Power Gain: Provides significant amplification of RF signals.
• High Efficiency: Minimizes power loss during signal amplification.
• Rugged Design: Withstands harsh operating conditions.

Advantages and Disadvantages

Advantages

• High power gain
• High efficiency
• Rugged construction

Disadvantages

• Limited frequency range
• Higher cost compared to lower power transistors

Working Principles

BLF573,112 operates based on the principles of RF amplification. When an RF signal is applied to the input pin, the transistor amplifies the signal and delivers it at the output pin with increased power.

Detailed Application Field Plans

BLF573,112 finds extensive use in the following application fields: - Wireless Communication Systems - Radar Systems - Broadcasting Equipment

Detailed and Complete Alternative Models

Some alternative models to BLF573,112 include: - BLF578 - BLF177 - BLF888

In conclusion, BLF573,112 is a high-power RF transistor designed for applications requiring significant RF signal amplification. Its high power gain, efficiency, and ruggedness make it a preferred choice for various RF power amplifier designs.

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