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BLF647PSJ

BLF647PSJ Encyclopedia Entry

Product Overview

Category

The BLF647PSJ belongs to the category of high-power RF transistors.

Use

It is used in high-frequency applications such as radio frequency (RF) amplifiers and transmitters.

Characteristics

  • High power handling capability
  • High frequency operation
  • Low distortion
  • High efficiency

Package

The BLF647PSJ is typically available in a metal-ceramic package for enhanced thermal performance.

Essence

The essence of the BLF647PSJ lies in its ability to amplify high-frequency signals with high power and low distortion.

Packaging/Quantity

It is usually packaged individually and quantities may vary based on supplier and customer requirements.

Specifications

  • Frequency Range: 470-860 MHz
  • Output Power: 50 W
  • Gain: 17 dB
  • Efficiency: >40%
  • Operating Voltage: 28 V
  • Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

The BLF647PSJ typically has a pin configuration consisting of input, output, and biasing pins. The specific pinout can be found in the datasheet provided by the manufacturer.

Functional Features

  • High power amplification
  • Broadband frequency operation
  • High linearity
  • Thermal stability

Advantages

  • High power handling capability
  • Wide frequency range
  • Low distortion
  • Suitable for high-efficiency applications

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management due to high power dissipation

Working Principles

The BLF647PSJ operates based on the principles of RF amplification using high-power semiconductor technology. It amplifies the input RF signal while maintaining linearity and efficiency.

Detailed Application Field Plans

The BLF647PSJ is commonly used in: - Broadcast transmitters - Cellular base stations - Radar systems - High-power RF amplifiers

Detailed and Complete Alternative Models

  • BLF648PSJ
  • MRF151G
  • MRFE6VP61K25H

In conclusion, the BLF647PSJ is a high-power RF transistor designed for demanding high-frequency applications where power, linearity, and efficiency are crucial factors.

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