BLF6G27LS-135,112

Product Overview

Category

The BLF6G27LS-135,112 belongs to the category of RF power transistors.

Use

It is used for high-frequency amplification in various applications such as wireless communication systems, radar systems, and industrial heating equipment.

Characteristics

• High power gain
• High efficiency
• Broadband capability
• Robustness and reliability

Package

The BLF6G27LS-135,112 is typically available in a ceramic package with metal flange for efficient heat dissipation.

Essence

This product is essential for achieving high-power amplification in RF systems while maintaining efficiency and reliability.

Packaging/Quantity

The BLF6G27LS-135,112 is usually packaged individually and comes in standard quantities per package.

Specifications

• Frequency Range: 2.5 GHz - 2.7 GHz
• Output Power: 135 W
• Gain: 16 dB
• Efficiency: 60%
• Voltage: 28 V
• Current: 15 A

Detailed Pin Configuration

The BLF6G27LS-135,112 has a detailed pin configuration with specific connections for gate, drain, and source terminals. It is important to refer to the datasheet for the exact pinout details.

Functional Features

• High power output
• Wide frequency range
• Excellent linearity
• Thermal stability

Advantages

• High power gain
• Suitable for broadband applications
• Reliable and robust construction
• Efficient heat dissipation

Disadvantages

• Higher cost compared to lower power transistors
• Requires careful handling due to sensitivity to electrostatic discharge

Working Principles

The BLF6G27LS-135,112 operates based on the principles of field-effect transistors, utilizing its high-frequency capabilities to amplify RF signals efficiently.

Detailed Application Field Plans

The BLF6G27LS-135,112 is widely used in: - Base stations for cellular networks - Radar systems for defense and surveillance - Industrial heating equipment for material processing

Detailed and Complete Alternative Models

Some alternative models to BLF6G27LS-135,112 include: - BLF6G22LS-130,118 - BLF6G20LS-130,112 - BLF6G22LS-130,112

In conclusion, the BLF6G27LS-135,112 is a high-performance RF power transistor that offers excellent power gain, efficiency, and reliability, making it suitable for a wide range of high-frequency amplification applications.

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