BLF8G22LS-200V,118
Product Category: RF Power Transistor
Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Efficiency, Broadband Capability - Package: SOT539A (LFPAK56) - Essence: Power Amplification in RF Communication Systems - Packaging/Quantity: Tape and Reel, 800 units per reel
Specifications: - Frequency Range: 1.8 GHz to 2.2 GHz - Voltage: 200V - Current: 18A - Gain: 22dB - Efficiency: 65%
Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not Connected - Pin 5: Not Connected
Functional Features: - High Power Gain - High Efficiency - Broadband Capability - Excellent Linearity
Advantages: - Suitable for Broadband Applications - High Efficiency Leads to Lower Heat Dissipation - Compact Package Size
Disadvantages: - Higher Cost Compared to Low-Power Transistors - Requires Adequate Thermal Management
Working Principles: The BLF8G22LS-200V,118 operates based on the principles of field-effect transistors, utilizing its high-power gain and efficiency to amplify radio frequency signals with minimal distortion.
Detailed Application Field Plans: - Cellular Base Stations - Radar Systems - Wireless Communication Systems - Satellite Communication Systems
Detailed and Complete Alternative Models: - BLF7G22LS-200V,118 - BLF9G22LS-200V,118 - BLF8G20LS-200V,118
This product is a crucial component in RF communication systems, providing high power amplification with excellent efficiency and linearity. Its wide application range and alternative models make it a versatile choice for various RF amplification needs.
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What is the maximum voltage rating for BLF8G22LS-200V,118?
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Can BLF8G22LS-200V,118 be used in automotive applications?
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Is BLF8G22LS-200V,118 RoHS compliant?