BDW93B-S

Product Overview

The BDW93B-S belongs to the category of power transistors and is commonly used in electronic circuits for amplification and switching applications. This NPN bipolar junction transistor (BJT) exhibits high voltage and current capabilities, making it suitable for various power-related tasks. The BDW93B-S is characterized by its robustness, reliability, and high power dissipation capacity. It is typically available in a TO-220 package and is sold individually or in bulk quantities.

Specifications

• Maximum Collector-Emitter Voltage: 100V
• Maximum Collector Current: 12A
• Power Dissipation: 80W
• Transition Frequency: 2MHz
• Package Type: TO-220
• Quantity: Individual or Bulk

Detailed Pin Configuration

The BDW93B-S features a standard TO-220 pin configuration with three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

• High voltage and current capability
• Low saturation voltage
• Fast switching speed
• Robust construction for reliable performance

Advantages and Disadvantages

Advantages

• High power dissipation capacity
• Suitable for power amplification and switching applications
• Robust and reliable construction

Disadvantages

• Relatively larger package size compared to smaller transistors
• Higher cost compared to low-power transistors

Working Principles

The BDW93B-S operates based on the principles of bipolar junction transistors, utilizing the control of current flow for amplification and switching purposes. When a small current is applied to the base terminal, a larger current flows between the collector and emitter, allowing for signal amplification or power switching.

Detailed Application Field Plans

The BDW93B-S finds extensive use in various applications, including: - Audio amplifiers - Power supply circuits - Motor control systems - Voltage regulators - Switching circuits

Detailed and Complete Alternative Models

Some alternative models to the BDW93B-S include: - TIP35C - MJ15003 - 2N3055 - MJE2955

In conclusion, the BDW93B-S is a versatile power transistor with high voltage and current capabilities, making it suitable for a wide range of amplification and switching applications. Its robustness, reliability, and high power dissipation capacity make it a popular choice among electronic circuit designers.

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