C2M1000170D Product Overview

Introduction

The C2M1000170D is a high-power, silicon carbide MOSFET designed for various applications in power electronics. This entry provides a comprehensive overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power Electronics Component
• Use: High-power switching applications
• Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed
• Package: TO-247
• Essence: Silicon Carbide MOSFET
• Packaging/Quantity: Individual units

Specifications

• Voltage Rating: 1700V
• Current Rating: 100A
• On-State Resistance: 17mΩ
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 175°C
• Switching Frequency: Up to 50kHz

Detailed Pin Configuration

1. Source
2. Gate
3. Drain

Functional Features

• High voltage and current handling capabilities
• Low on-state resistance for reduced power losses
• Fast switching speed for improved efficiency
• Enhanced thermal performance

Advantages and Disadvantages

Advantages

• Superior performance in high-power applications
• Reduced power dissipation
• Enhanced reliability and ruggedness
• Suitable for high-frequency operation

Disadvantages

• Higher cost compared to traditional silicon-based MOSFETs
• Sensitivity to voltage transients

Working Principles

The C2M1000170D operates based on the principles of silicon carbide semiconductor technology, offering lower conduction and switching losses compared to conventional silicon-based devices. When a suitable gate-source voltage is applied, the device allows current to flow between the drain and source terminals, enabling efficient power control in various electronic circuits.

Detailed Application Field Plans

The C2M1000170D is ideally suited for use in: - High-power industrial inverters - Electric vehicle powertrains - Renewable energy systems - High-frequency power supplies - Motor drives and traction applications

Detailed and Complete Alternative Models

• C2M1000170J: Similar specifications with enhanced thermal performance
• C3M0075120K: Lower voltage rating with higher current capability
• C4D02120E: Dual diode module with complementary characteristics

In conclusion, the C2M1000170D silicon carbide MOSFET offers exceptional performance and reliability in high-power applications, making it an ideal choice for modern power electronics designs.

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