CY7C1069DV33-10BVXIT

Product Overview

Category

CY7C1069DV33-10BVXIT belongs to the category of high-speed synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, networking equipment, telecommunications systems, and consumer electronics.

Characteristics

• High-speed operation: The CY7C1069DV33-10BVXIT offers fast access times, allowing for quick data processing.
• Large storage capacity: This chip provides a generous amount of memory space, enabling the storage of substantial amounts of data.
• Low power consumption: It is designed to operate efficiently with minimal power requirements.
• Reliable performance: The CY7C1069DV33-10BVXIT ensures stable and consistent operation, minimizing the risk of data corruption or loss.

Package

The CY7C1069DV33-10BVXIT is available in a compact and durable package, which protects the chip from external factors such as moisture and physical damage. The specific package type for this product is BGA (Ball Grid Array).

Essence

The essence of CY7C1069DV33-10BVXIT lies in its ability to provide high-speed and reliable data storage, making it an essential component in modern electronic devices.

Packaging/Quantity

This product is typically sold in reels or trays, depending on the manufacturer's packaging standards. The quantity per reel or tray may vary, but it is commonly available in quantities suitable for both small-scale and large-scale production.

Specifications

• Operating voltage: 3.3V
• Access time: 10ns
• Organization: 1M x 8 bits
• Interface: Synchronous
• Operating temperature range: -40°C to +85°C
• Data retention: 10 years

Detailed Pin Configuration

The CY7C1069DV33-10BVXIT chip has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. VDD
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. A8
21. A9
22. A10
23. A11
24. A12
25. A13
26. A14
27. A15
28. A16
29. A17
30. A18
31. A19
32. A20
33. A21
34. A22
35. A23
36. A24
37. A25
38. A26
39. A27
40. A28
41. A29
42. A30
43. A31
44. WE#
45. OE#
46. CE#
47. UB#
48. LB#

Functional Features

• Synchronous operation: The CY7C1069DV33-10BVXIT synchronizes data transfers with an external clock signal, ensuring reliable and accurate communication.
• Burst mode support: This chip supports burst mode operations, allowing for efficient consecutive data transfers.
• Write protection: It provides write protection functionality to prevent accidental modification or corruption of stored data.
• Power-saving modes: The CY7C1069DV33-10BVXIT incorporates power-saving features, reducing energy consumption during idle periods.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Large storage capacity accommodates substantial amounts of data.
• Low power consumption contributes to energy efficiency.
• Reliable performance ensures data integrity.
• Synchronous operation facilitates accurate communication.

Disadvantages

• Limited compatibility with certain older systems or devices that do not support synchronous SRAM technology.
• Relatively higher cost compared to other memory options with lower specifications.

Working Principles

The CY7C1069DV33-10BVXIT operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip utilizes a synchronous interface, which synchronizes data transfers with an external clock signal. This synchronization ensures reliable and accurate communication between the chip and the system it is integrated into.

Detailed Application Field Plans

The CY7C1069DV33-10BVXIT finds extensive application in various fields, including:

1. Computers and servers: It is used for high