CY7C1312KV18-250BZXC

Product Overview

Category

The CY7C1312KV18-250BZXC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High performance: The CY7C1312KV18-250BZXC offers fast access times and high bandwidth, making it suitable for demanding applications.
• Large capacity: With a capacity of 1,048,576 words x 18 bits, this chip provides ample storage space for data-intensive tasks.
• Low power consumption: Despite its high performance, the CY7C1312KV18-250BZXC is designed to operate efficiently, minimizing power consumption.
• Wide operating voltage range: This chip can function reliably within a voltage range of 1.7V to 1.9V.
• Robust package: The CY7C1312KV18-250BZXC is available in a compact BGA (Ball Grid Array) package, ensuring durability and ease of integration into circuit boards.
• Packaging/Quantity: This product is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Organization: 1,048,576 words x 18 bits
• Operating Voltage Range: 1.7V to 1.9V
• Access Time: 2.5 ns
• Cycle Time: 5 ns
• Package Type: BGA
• Package Dimensions: 13 mm x 15 mm
• Temperature Range: -40°C to +85°C

Pin Configuration

The detailed pin configuration of the CY7C1312KV18-250BZXC can be found in the product datasheet.

Functional Features

• High-speed operation: The CY7C1312KV18-250BZXC offers fast access times and cycle times, enabling efficient data processing.
• Easy integration: With its compact BGA package, this chip can be easily integrated into various electronic systems.
• Low power consumption: The optimized design of this SRAM chip ensures minimal power usage, making it suitable for energy-efficient applications.
• Reliable performance: The CY7C1312KV18-250BZXC is designed to provide reliable and stable operation, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High-performance capabilities
• Large storage capacity
• Low power consumption
• Wide operating voltage range

Disadvantages

• Relatively higher cost compared to other memory options
• Limited availability in certain markets

Working Principles

The CY7C1312KV18-250BZXC operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip utilizes a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The CY7C1312KV18-250BZXC finds application in various fields, including: 1. Computer systems: Used as cache memory or main memory in high-performance computers. 2. Networking equipment: Employed for buffering and storing data packets in routers and switches. 3. Telecommunications systems: Utilized for data buffering and caching in communication infrastructure. 4. Industrial automation: Applied in control systems and data acquisition devices.

Detailed and Complete Alternative Models

1. CY7C1312KV18-400BZXC: A variant with a higher operating frequency for increased performance.
2. CY7C1312KV18-550BZXC: Another variant with an even higher operating frequency, suitable for demanding applications.
3. CY7C1312KV18-100BZXC: A lower-cost option with slightly reduced performance specifications.

These alternative models provide flexibility in choosing the most suitable SRAM chip based on specific requirements.

In conclusion, the CY7C1312KV18-250BZXC is a high-performance synchronous SRAM chip that offers fast access times, large storage capacity, and low power consumption. It finds application in various electronic systems and is available in alternative models to cater to different needs.