Cypress Semiconductor Corp
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CY7C25702KV18-500BZC
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CY7C25702KV18-500BZC

Product Overview

Category

The CY7C25702KV18-500BZC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

  • High Performance: The CY7C25702KV18-500BZC offers fast access times and high bandwidth, making it suitable for demanding applications.
  • Large Capacity: With a capacity of 256 megabits (32 megabytes), this chip provides ample storage space for data-intensive tasks.
  • Synchronous Operation: The chip operates synchronously with the system clock, ensuring efficient data transfer and synchronization.
  • Low Power Consumption: Despite its high performance, the CY7C25702KV18-500BZC is designed to minimize power consumption, making it energy-efficient.

Package

The CY7C25702KV18-500BZC is available in a compact and industry-standard BGA (Ball Grid Array) package. This package ensures reliable electrical connections and facilitates easy integration into circuit boards.

Essence

At its core, the CY7C25702KV18-500BZC is a high-speed memory chip that stores and retrieves data quickly and reliably. Its advanced design and features make it an essential component in modern electronic systems.

Packaging/Quantity

The CY7C25702KV18-500BZC is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is usually in the range of several hundred to a few thousand units.

Specifications

  • Memory Type: Synchronous SRAM
  • Capacity: 256 Mb (32 MB)
  • Access Time: 5 ns
  • Operating Voltage: 1.8V
  • Interface: Parallel
  • Package Type: BGA
  • Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The CY7C25702KV18-500BZC features a pin configuration that enables seamless integration into electronic systems. The detailed pinout is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDDQ
  20. DQ16
  21. DQ17
  22. DQ18
  23. DQ19
  24. DQ20
  25. DQ21
  26. DQ22
  27. DQ23
  28. VSSQ
  29. DQ24
  30. DQ25
  31. DQ26
  32. DQ27
  33. DQ28
  34. DQ29
  35. DQ30
  36. DQ31
  37. VDDQ
  38. A0
  39. A1
  40. A2
  41. A3
  42. A4
  43. A5
  44. A6
  45. A7
  46. VSSQ
  47. A8
  48. A9
  49. A10
  50. A11
  51. A12
  52. A13
  53. A14
  54. A15
  55. VDDQ
  56. A16
  57. A17
  58. A18
  59. A19
  60. A20
  61. A21
  62. A22
  63. A23
  64. VSSQ
  65. A24
  66. A25
  67. A26
  68. A27
  69. A28
  70. A29
  71. A30
  72. A31
  73. VDDQ
  74. /WE#
  75. /OE#
  76. /UB#
  77. /LB#
  78. /CE#
  79. CLK
  80. VSSQ

Functional Features

The CY7C25702KV18-500BZC offers several functional features that enhance its performance and usability:

  1. Burst Mode: The chip supports burst mode operation, allowing for consecutive data transfers without the need for individual address cycles.
  2. Write Protection: It includes write protection functionality to prevent accidental modification of stored data.
  3. Asynchronous Output Enable: The asynchronous output enable feature enables immediate access to data during read operations. 4

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng CY7C25702KV18-500BZC trong giải pháp kỹ thuật

Sure! Here are 10 common questions and answers related to the application of CY7C25702KV18-500BZC:

  1. Question: What is the maximum operating frequency of CY7C25702KV18-500BZC?
    Answer: The maximum operating frequency of CY7C25702KV18-500BZC is 500 MHz.

  2. Question: What is the voltage supply range for this device?
    Answer: The voltage supply range for CY7C25702KV18-500BZC is 1.8V ± 0.1V.

  3. Question: Can I use this device in low-power applications?
    Answer: Yes, CY7C25702KV18-500BZC is designed for low-power applications and has power-saving features.

  4. Question: What is the typical access time for this device?
    Answer: The typical access time for CY7C25702KV18-500BZC is 2.5 ns.

  5. Question: Does this device support multiple banks?
    Answer: Yes, CY7C25702KV18-500BZC supports up to 4 independent banks.

  6. Question: What is the capacity of each memory bank?
    Answer: Each memory bank of CY7C25702KV18-500BZC has a capacity of 256 Mb (Megabits).

  7. Question: Can I operate this device at higher temperatures?
    Answer: Yes, CY7C25702KV18-500BZC is rated for industrial temperature range (-40°C to +85°C).

  8. Question: Does this device have built-in error correction capabilities?
    Answer: Yes, CY7C25702KV18-500BZC supports on-chip ECC (Error Correction Code) for data integrity.

  9. Question: What is the package type of CY7C25702KV18-500BZC?
    Answer: CY7C25702KV18-500BZC comes in a 165-ball BGA (Ball Grid Array) package.

  10. Question: Can I use this device in high-performance computing applications?
    Answer: Yes, CY7C25702KV18-500BZC is suitable for high-performance computing and memory-intensive applications.

Please note that these answers are based on general information about CY7C25702KV18-500BZC and may vary depending on specific implementation requirements.