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1N5834R

1N5834R Diode

Product Overview

Category:

The 1N5834R is a Schottky diode, which falls under the category of semiconductor devices.

Use:

It is commonly used in electronic circuits for rectification and voltage regulation purposes.

Characteristics:

  • Low forward voltage drop
  • High current capability
  • Fast switching speed
  • Low reverse leakage current

Package:

The 1N5834R is typically available in a DO-201AD package.

Essence:

This diode is essential for converting alternating current (AC) to direct current (DC) and for preventing reverse flow of current in electronic circuits.

Packaging/Quantity:

It is usually sold in reels or tubes containing a specific quantity, such as 100 or 500 pieces per package.

Specifications

  • Maximum Average Forward Current: 3A
  • Maximum Reverse Voltage: 40V
  • Forward Voltage Drop: 0.5V at 3A
  • Reverse Leakage Current: 0.5mA at 40V

Detailed Pin Configuration

The 1N5834R diode has two pins, anode and cathode, with the anode being connected to the positive terminal and the cathode to the negative terminal of the circuit.

Functional Features

  • Efficient rectification of AC to DC
  • Fast response time for switching applications
  • Low power dissipation
  • High reliability and ruggedness

Advantages

  • Low forward voltage drop reduces power loss
  • Fast switching speed allows for high-frequency operation
  • High current capability enables use in power applications

Disadvantages

  • Limited reverse voltage rating compared to other diode types
  • Higher cost compared to standard silicon diodes

Working Principles

The 1N5834R operates based on the Schottky barrier principle, where the metal-semiconductor junction provides low forward voltage drop and fast switching characteristics.

Detailed Application Field Plans

  • Power supply units
  • Voltage clamping circuits
  • Switching power converters
  • Solar panel bypass diodes

Detailed and Complete Alternative Models

  • 1N5817, 1N5822, 1N5825
  • SS34, SS36, SS310

In conclusion, the 1N5834R Schottky diode offers efficient rectification and voltage regulation capabilities, making it suitable for various electronic applications. Its low forward voltage drop and fast switching speed are advantageous, although it has limitations in terms of reverse voltage rating and cost compared to other diode types.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng 1N5834R trong giải pháp kỹ thuật

  1. What is the 1N5834R diode used for?

    • The 1N5834R diode is commonly used in rectification and voltage regulation applications.
  2. What is the maximum forward current rating of the 1N5834R diode?

    • The maximum forward current rating of the 1N5834R diode is typically around 3A.
  3. What is the reverse voltage rating of the 1N5834R diode?

    • The 1N5834R diode has a reverse voltage rating of around 200V.
  4. Can the 1N5834R diode be used in high-frequency applications?

    • Yes, the 1N5834R diode can be used in high-frequency applications due to its fast switching characteristics.
  5. What are the typical applications of the 1N5834R diode?

    • The 1N5834R diode is commonly used in power supplies, voltage regulators, and DC-DC converters.
  6. Does the 1N5834R diode require a heatsink?

    • Depending on the application and operating conditions, the 1N5834R diode may require a heatsink to dissipate heat effectively.
  7. Is the 1N5834R diode suitable for automotive applications?

    • Yes, the 1N5834R diode is often used in automotive electronics due to its rugged construction and reliability.
  8. What is the temperature range for the 1N5834R diode?

    • The 1N5834R diode typically operates within a temperature range of -65°C to 175°C.
  9. Can the 1N5834R diode handle surge currents?

    • Yes, the 1N5834R diode is capable of handling short-duration surge currents, making it suitable for transient protection applications.
  10. Are there any common failure modes associated with the 1N5834R diode?

    • Common failure modes for the 1N5834R diode include thermal runaway under high current conditions and reverse voltage breakdown if the specified limits are exceeded.