Encyclopedia Entry: 71V416L10YG

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416L10YG is a high-speed, low-power, 4 Megabit (4M x 16-bit) CMOS EPROM memory chip. It is commonly used in various electronic devices and systems that require non-volatile memory storage.

Characteristics: - High-speed operation - Low power consumption - Large memory capacity - Reliable data retention - Easy integration into existing circuitry

Package: The 71V416L10YG is available in a standard 44-pin Plastic Leaded Chip Carrier (PLCC) package. This package provides protection to the integrated circuit and facilitates easy installation onto printed circuit boards.

Essence: The essence of the 71V416L10YG lies in its ability to store and retrieve digital information reliably, while offering fast access times and low power consumption.

Packaging/Quantity: The 71V416L10YG is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Memory Capacity: 4 Megabits (4M x 16-bit)
• Supply Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 20 µA (typical)
• Package Type: 44-pin PLCC

Detailed Pin Configuration

The 71V416L10YG features a total of 44 pins, each serving a specific function within the integrated circuit. The pin configuration is as follows:

(Pin diagram goes here)

Functional Features

1. High-Speed Operation: The 71V416L10YG offers fast access times, allowing for efficient data retrieval and storage operations.

2. Low Power Consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices and energy-efficient systems.

3. Reliable Data Retention: The 71V416L10YG ensures data integrity with its reliable non-volatile memory technology, preventing data loss even during power interruptions.

4. Easy Integration: With its standard package and pin configuration, the 71V416L10YG can be easily integrated into existing circuitry, simplifying the design process.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data handling. - Low power consumption prolongs battery life in portable devices. - Reliable data retention ensures data integrity. - Easy integration saves time and effort in circuit design.

Disadvantages: - Limited memory capacity compared to higher-density memory chips. - Higher cost per bit compared to larger memory chips.

Working Principles

The 71V416L10YG utilizes CMOS EPROM technology to store digital information. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written to the memory, electrical charges are trapped within the memory cells, representing the stored information. These charges can be read back later to retrieve the stored data.

Detailed Application Field Plans

The 71V416L10YG finds applications in various electronic devices and systems, including but not limited to: - Embedded systems - Communication equipment - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. 71V416S10PHG - Similar to the 71V416L10YG, but with a different package type (TSOP).
2. 71V416S12PHG - Higher-speed version of the 71V416L10YG with a 12 ns access time.
3. 71V416S15PHG - Higher-density version of the 71V416L10YG with a capacity of 8 Megabits.

These alternative models offer similar functionality and can be considered as alternatives based on specific requirements and constraints.

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