BSO130N03MSGXUMA1

Product Category: Power MOSFET

Basic Information Overview: - Category: Electronic Component - Use: Power switching in electronic circuits - Characteristics: High power handling capacity, low on-state resistance, fast switching speed - Package: TO-220AB - Essence: Efficient power management - Packaging/Quantity: Bulk packaging, quantity varies by supplier

Specifications: - Voltage Rating: 30V - Current Rating: 130A - On-State Resistance: 3mΩ - Gate Threshold Voltage: 2V - Maximum Power Dissipation: 200W

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - High current-carrying capability - Low conduction losses - Fast switching speed - Enhanced thermal performance

Advantages and Disadvantages: - Advantages: - Efficient power handling - Low on-state resistance - Fast switching speed - Disadvantages: - Sensitivity to overvoltage conditions - Potential for thermal runaway if not properly managed

Working Principles: The BSO130N03MSGXUMA1 operates based on the principle of field-effect transistors, utilizing an electric field to control the conductivity of the device. When a voltage is applied to the gate terminal, it modulates the flow of current between the drain and source terminals, allowing for efficient power switching.

Detailed Application Field Plans: - Switched Mode Power Supplies (SMPS): Utilized in high-frequency power conversion applications. - Motor Control: Enables precise control of motor speed and direction in various industrial and automotive systems. - Electronic Load Switching: Used in circuitry to manage power distribution and load switching.

Detailed and Complete Alternative Models: 1. BSO140N03MSGXUMA1 - Similar specifications with higher current rating 2. BSO120N03MSGXUMA1 - Similar specifications with lower on-state resistance 3. BSO130N03MSHGXUMA1 - Similar specifications with enhanced thermal performance

This comprehensive entry provides a detailed understanding of the BSO130N03MSGXUMA1 Power MOSFET, including its specifications, functional features, application fields, and alternative models.

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