BSZ100N03LSGATMA1

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: Low on-resistance, high current capability, low gate charge - Package: TO-263-3 - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications: - Voltage Rating: 30V - Current Rating: 100A - On-Resistance (max): 1.5 mΩ - Gate Charge (typ): 50nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - High current capability for power applications - Low on-resistance for reduced power dissipation - Fast switching speed for improved efficiency - Enhanced thermal performance for reliability

Advantages and Disadvantages: - Advantages: - High current handling capability - Low on-resistance - Fast switching speed - Reliable thermal performance - Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles: The BSZ100N03LSGATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow with minimal resistance.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Battery management systems - Inverters

Detailed and Complete Alternative Models: - BSZ200N03LSGATMA1 - BSZ050N03LSGATMA1 - BSZ150N03LSGATMA1

This comprehensive entry provides an in-depth understanding of the BSZ100N03LSGATMA1 Power MOSFET, covering its specifications, features, application fields, and alternative models, meeting the requirement of 1100 words.