IPB023N04NGATMA1

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-power electronic devices
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-263-3
Essence: N-channel enhancement mode power MOSFET
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage Rating: 40V
• Current Rating: 75A
• On-Resistance: 2.3mΩ
• Gate Threshold Voltage: 2V
• Maximum Power Dissipation: 200W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB023N04NGATMA1 follows the standard pin configuration for a TO-263-3 package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low gate charge
• Avalanche energy specified
• Improved dv/dt capability
• RoHS compliant

Advantages and Disadvantages

Advantages: - High voltage capability - Low on-resistance - Fast switching speed - RoHS compliant

Disadvantages: - Higher cost compared to some alternative models - Sensitive to electrostatic discharge (ESD)

Working Principles

The IPB023N04NGATMA1 operates based on the principles of field-effect transistors, utilizing an electric field to control the conductivity of the channel.

Detailed Application Field Plans

This power MOSFET is suitable for various applications including: - Power supplies - Motor control - Inverters - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

1. IPB025N04LG: Similar specifications with lower on-resistance
2. IPB022N04LG: Lower current rating but lower cost
3. IPB024N04N: Higher voltage rating with slightly higher on-resistance

In conclusion, the IPB023N04NGATMA1 is a high-performance power MOSFET suitable for demanding switching applications in various fields. Its combination of high voltage capability, low on-resistance, and fast switching speed makes it a valuable component in power electronics design.

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