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IPB065N15N3GE8187ATMA1
Product Overview
Category
The IPB065N15N3GE8187ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Excellent thermal performance
Package
The IPB065N15N3GE8187ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 150V
- Continuous Drain Current (ID): 65A
- On-Resistance (RDS(on)): 8.7mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 70nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB065N15N3GE8187ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power losses and improves efficiency.
- Fast switching speed enables rapid control of power flow.
- Low gate charge reduces drive requirements and enhances performance.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for precise power control
Disadvantages
- Higher gate charge compared to some alternative models
- Limited availability from certain suppliers
Working Principles
The IPB065N15N3GE8187ATMA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB065N15N3GE8187ATMA1 is commonly used in: - Motor control systems - Power supplies - Inverters - Industrial automation equipment - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPB065N15N3GE8187ATMA1 include: - IRF1405PbF - FDP8870 - AUIRF7739L2
In conclusion, the IPB065N15N3GE8187ATMA1 is a high-performance power MOSFET with excellent characteristics for various power management applications, despite some limitations in availability and gate charge compared to alternative models.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPB065N15N3GE8187ATMA1 trong giải pháp kỹ thuật
What is the maximum drain-source voltage of IPB065N15N3GE8187ATMA1?
- The maximum drain-source voltage of IPB065N15N3GE8187ATMA1 is 150V.
What is the continuous drain current rating of IPB065N15N3GE8187ATMA1?
- The continuous drain current rating of IPB065N15N3GE8187ATMA1 is 65A.
What is the on-state resistance (RDS(on)) of IPB065N15N3GE8187ATMA1?
- The on-state resistance (RDS(on)) of IPB065N15N3GE8187ATMA1 is typically 0.015 ohms.
Can IPB065N15N3GE8187ATMA1 be used in automotive applications?
- Yes, IPB065N15N3GE8187ATMA1 is designed for use in automotive applications.
What is the operating temperature range of IPB065N15N3GE8187ATMA1?
- The operating temperature range of IPB065N15N3GE8187ATMA1 is -55°C to 175°C.
Does IPB065N15N3GE8187ATMA1 have built-in protection features?
- Yes, IPB065N15N3GE8187ATMA1 has built-in protection features such as overcurrent protection and thermal shutdown.
What type of package does IPB065N15N3GE8187ATMA1 come in?
- IPB065N15N3GE8187ATMA1 comes in a TO-263-7 package.
Is IPB065N15N3GE8187ATMA1 suitable for high-frequency switching applications?
- Yes, IPB065N15N3GE8187ATMA1 is suitable for high-frequency switching applications.
What gate-source voltage is required to fully enhance IPB065N15N3GE8187ATMA1?
- A gate-source voltage of 10V is typically required to fully enhance IPB065N15N3GE8187ATMA1.
Are there any application notes or reference designs available for using IPB065N15N3GE8187ATMA1 in technical solutions?
- Yes, application notes and reference designs are available to assist in using IPB065N15N3GE8187ATMA1 in technical solutions.