IPB075N04LGATMA1

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High current handling capability, low on-state resistance, fast switching speed - Package: TO-263-3 (D2PAK) - Essence: Efficient power management and control - Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications: - Voltage Rating: 40V - Current Rating: 75A - On-State Resistance: 4mΩ - Gate Charge: 45nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - Low on-state resistance for minimal power dissipation - Fast switching speed for efficient power management - High current handling capability for robust performance

Advantages: - Enhanced power efficiency - Reduced heat generation - Improved system reliability

Disadvantages: - Sensitive to voltage spikes - Requires careful ESD handling during assembly

Working Principles: The IPB075N04LGATMA1 operates based on the principles of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This enables the MOSFET to efficiently switch and amplify electronic signals in power applications.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models: - IRF3205 - FDP8878 - STP80NF03L

This comprehensive entry provides an in-depth understanding of the IPB075N04LGATMA1 Power MOSFET, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

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