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IPB12CN10N G
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IPB12CN10N G

Product Overview

Category

The IPB12CN10N G belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified

Package

The IPB12CN10N G is typically available in a TO-263 package.

Essence

The essence of this product lies in its ability to efficiently control and switch high voltages in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels and is available in varying quantities depending on the supplier.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 120A
  • On-Resistance (RDS(on)): 9.5mΩ
  • Power Dissipation (PD): 310W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB12CN10N G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various high-power applications.
  • Low on-resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient control of power flow.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to static electricity

Working Principles

The IPB12CN10N G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB12CN10N G is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPB12CN10N G include: - IPB12N10S3L-13 - IPB12N10S3L-14 - IPB12N10S3L-15

In conclusion, the IPB12CN10N G is a high-performance power MOSFET with excellent voltage handling capabilities, making it suitable for a wide range of high-power electronic applications.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPB12CN10N G trong giải pháp kỹ thuật

  1. What is the IPB12CN10N G?

    • The IPB12CN10N G is a high-power, N-channel MOSFET designed for use in various technical solutions requiring efficient power management.

  2. What are the key specifications of the IPB12CN10N G?

    • The key specifications include a maximum drain-source voltage of 100V, a continuous drain current of 120A, and low on-resistance for high efficiency.

  3. In what applications can the IPB12CN10N G be used?

    • The IPB12CN10N G is commonly used in applications such as motor control, power supplies, and DC-DC converters due to its high current and voltage handling capabilities.

  4. What are the thermal characteristics of the IPB12CN10N G?

    • The device features low thermal resistance and is designed to efficiently dissipate heat, making it suitable for high-power applications.

  5. Does the IPB12CN10N G require any special driving considerations?

    • It is recommended to drive the IPB12CN10N G with proper gate drive circuitry to ensure fast switching and minimize power losses.

  6. What protection features does the IPB12CN10N G offer?

    • The device includes built-in protection against overcurrent, overvoltage, and overtemperature conditions, enhancing system reliability.

  7. Can the IPB12CN10N G be used in automotive applications?

    • Yes, the IPB12CN10N G is suitable for automotive applications, offering robust performance and reliability in harsh operating environments.

  8. Are there any application notes or reference designs available for the IPB12CN10N G?

    • Yes, application notes and reference designs are available to assist in the proper implementation of the IPB12CN10N G in various technical solutions.

  9. What are the advantages of using the IPB12CN10N G in power electronics applications?

    • The IPB12CN10N G offers low conduction and switching losses, high efficiency, and excellent ruggedness, making it ideal for demanding power electronics applications.

  10. Where can I find detailed technical documentation for the IPB12CN10N G?

    • Detailed technical documentation, including datasheets and application guides, can be found on the manufacturer's website or through authorized distributors.