Xem thông số kỹ thuật để biết chi tiết sản phẩm.
IPB160N04S2L03ATMA2
Product Overview
Category
The IPB160N04S2L03ATMA2 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power
- Enhanced thermal performance
Package
The IPB160N04S2L03ATMA2 is typically available in a TO-263-3 package.
Essence
This power MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 40V
- Continuous Drain Current (ID): 160A
- On-State Resistance (RDS(on)): 1.6mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 150nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB160N04S2L03ATMA2 features a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low conduction losses
- Reduced heat dissipation
- Improved system efficiency
- Enhanced reliability
- Suitable for high-frequency applications
Advantages and Disadvantages
Advantages
- High current-handling capacity
- Low on-state resistance
- Fast switching speed
- Reduced power dissipation
- Enhanced thermal performance
Disadvantages
- Sensitivity to voltage spikes
- Potential for gate oxide damage if mishandled
Working Principles
The IPB160N04S2L03ATMA2 operates based on the principle of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB160N04S2L03ATMA2 is widely used in the following applications: - Switched-mode power supplies - Motor control systems - Solar inverters - Electric vehicles - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB160N04S2L03ATMA2 include: - IRF1405PBF - FDP8870 - STP80NF70
In conclusion, the IPB160N04S2L03ATMA2 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.
[Word Count: 366]
Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPB160N04S2L03ATMA2 trong giải pháp kỹ thuật
What is the maximum drain-source voltage of IPB160N04S2L03ATMA2?
- The maximum drain-source voltage of IPB160N04S2L03ATMA2 is 40V.
What is the continuous drain current rating of IPB160N04S2L03ATMA2?
- The continuous drain current rating of IPB160N04S2L03ATMA2 is 160A.
What is the on-resistance of IPB160N04S2L03ATMA2?
- The on-resistance of IPB160N04S2L03ATMA2 is typically 1.6mΩ at Vgs=10V.
Can IPB160N04S2L03ATMA2 be used in automotive applications?
- Yes, IPB160N04S2L03ATMA2 is designed for automotive applications.
What is the operating temperature range of IPB160N04S2L03ATMA2?
- The operating temperature range of IPB160N04S2L03ATMA2 is -55°C to 175°C.
Does IPB160N04S2L03ATMA2 have built-in ESD protection?
- Yes, IPB160N04S2L03ATMA2 features built-in ESD protection.
What type of package does IPB160N04S2L03ATMA2 come in?
- IPB160N04S2L03ATMA2 comes in a TO-263-7 package.
Is IPB160N04S2L03ATMA2 suitable for high-frequency switching applications?
- Yes, IPB160N04S2L03ATMA2 is suitable for high-frequency switching applications.
What gate threshold voltage does IPB160N04S2L03ATMA2 require?
- IPB160N04S2L03ATMA2 typically requires a gate threshold voltage of 2.5V.
Does IPB160N04S2L03ATMA2 have a low input capacitance?
- Yes, IPB160N04S2L03ATMA2 has a low input capacitance, making it suitable for high-speed switching applications.