IPG20N04S412ATMA1

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High power handling, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: Efficient power management
• Packaging/Quantity: Standard reel packaging, quantity varies by supplier

Specifications

• Voltage - Rated: 40V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) @ Vds: 3300pF @ 25V
• Power Dissipation (Max): 2.5W

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• High current capability
• Low gate charge
• Enhanced power efficiency
• Fast switching speed

Advantages and Disadvantages

Advantages

• Low on-resistance
• High power handling capacity
• Fast switching speed
• Reliable performance in power switching applications

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The IPG20N04S412ATMA1 operates based on the principles of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This enables efficient power switching and management in various electronic circuits.

Detailed Application Field Plans

The IPG20N04S412ATMA1 is widely used in power supply units, motor control systems, and high-current switching applications. Its high power handling and low on-resistance make it suitable for demanding environments where efficient power management is crucial.

Detailed and Complete Alternative Models

• IRF3205
• FDP8878
• STP55NF06L
• AUIRF1404Z

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