IPI120N06S4H1AKSA1

Category: Power MOSFET

Use: The IPI120N06S4H1AKSA1 is a power MOSFET designed for use in high-power applications such as motor control, power supplies, and inverters.

Characteristics: This MOSFET features low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion applications. It is packaged in a TO-262-3 package.

Package: TO-262-3

Essence: The essence of the IPI120N06S4H1AKSA1 lies in its ability to efficiently switch high currents with minimal power loss, making it ideal for power electronics applications.

Packaging/Quantity: The IPI120N06S4H1AKSA1 is typically available in reels containing a specific quantity based on customer requirements.

Specifications:

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 120A
• On-State Resistance (RDS(on)): 0.006 ohms
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 110nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration:

The IPI120N06S4H1AKSA1 features a standard three-pin configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features:

• Low on-state resistance for high efficiency
• High switching speed for fast operation
• Low gate charge for reduced drive power requirements

Advantages:

• High current handling capability
• Low power dissipation
• Fast switching times

Disadvantages:

• Sensitive to overvoltage conditions
• Requires careful consideration of gate drive circuitry

Working Principles:

The IPI120N06S4H1AKSA1 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans:

The IPI120N06S4H1AKSA1 is well-suited for use in various high-power applications, including: - Motor control systems - Power supply units - Inverter circuits

Detailed and Complete Alternative Models:

• IPI120N06S4-AT
• IPP120N06S4L-04
• IRF1405PBF

In conclusion, the IPI120N06S4H1AKSA1 power MOSFET offers high-performance characteristics suitable for demanding power electronics applications, with a range of alternative models available to meet specific design requirements.

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