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IRF6729MTRPBF
Product Overview
Category
The IRF6729MTRPBF belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications such as voltage regulation and switching circuits.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive requirements
Package
The IRF6729MTRPBF is typically available in a TO-252 package.
Essence
This power MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 20A
- RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 2.5W
Detailed Pin Configuration
The IRF6729MTRPBF has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low conduction losses
- High efficiency
- Enhanced thermal performance
- Reliable operation in high-power applications
Advantages
- High power handling capacity
- Low on-state resistance leading to reduced power dissipation
- Fast switching speed for improved efficiency
- Suitable for a wide range of power management applications
Disadvantages
- Higher cost compared to traditional power transistors
- Sensitive to electrostatic discharge (ESD)
Working Principles
The IRF6729MTRPBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently regulate the power flow in a circuit.
Detailed Application Field Plans
The IRF6729MTRPBF is widely used in: - Switching power supplies - Motor control systems - Battery management systems - LED lighting applications - DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the IRF6729MTRPBF include: - IRF6729S2PBF - IRF6732MTRPBF - IRF6745MTRPBF - IRF6753MTRPBF
In conclusion, the IRF6729MTRPBF power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, making it an essential component in modern electronic systems.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IRF6729MTRPBF trong giải pháp kỹ thuật
Sure, here are 10 common questions and answers related to the application of IRF6729MTRPBF:
What is the maximum drain-source voltage (VDS) of IRF6729MTRPBF?
- The maximum drain-source voltage (VDS) of IRF6729MTRPBF is 30 volts.
What is the continuous drain current (ID) rating of IRF6729MTRPBF?
- The continuous drain current (ID) rating of IRF6729MTRPBF is 20 amperes.
What is the on-state resistance (RDS(on)) of IRF6729MTRPBF?
- The on-state resistance (RDS(on)) of IRF6729MTRPBF is typically 4.5 milliohms at VGS = 10V.
What is the gate-source voltage (VGS) range for IRF6729MTRPBF?
- The gate-source voltage (VGS) range for IRF6729MTRPBF is ±20 volts.
What is the power dissipation (PD) of IRF6729MTRPBF?
- The power dissipation (PD) of IRF6729MTRPBF is 100 watts.
What type of package does IRF6729MTRPBF come in?
- IRF6729MTRPBF comes in a D2PAK (TO-263) package.
Is IRF6729MTRPBF suitable for automotive applications?
- Yes, IRF6729MTRPBF is suitable for automotive applications.
What is the operating temperature range for IRF6729MTRPBF?
- The operating temperature range for IRF6729MTRPBF is -55°C to 175°C.
Does IRF6729MTRPBF have built-in protection features?
- Yes, IRF6729MTRPBF has built-in overcurrent protection.
Can IRF6729MTRPBF be used in high-frequency switching applications?
- Yes, IRF6729MTRPBF can be used in high-frequency switching applications due to its low RDS(on) and fast switching characteristics.