IRFH6200TR2PBF

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current applications
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: PQFN 5x6
Essence: Power MOSFET for high-current switching applications
Packaging/Quantity: Tape & Reel, 3000 units

Specifications

• Drain-Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 120A
• Rds(on) (Max) @ Vgs = 10V: 1.7mΩ
• Gate-Source Voltage (Vgs): ±20V
• Input Capacitance (Ciss): 6800pF
• Power Dissipation (Pd): 200W

Detailed Pin Configuration

1. Gate
2. Drain
3. Source
4. NC
5. NC
6. Source

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for improved efficiency
• High current handling capability for demanding applications

Advantages

• High efficiency
• Low on-resistance
• Fast switching speed

Disadvantages

• May require careful thermal management at high currents

Working Principles

The IRFH6200TR2PBF operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is suitable for a wide range of applications including: - Power supplies - Motor control systems - High-current switching circuits

Detailed and Complete Alternative Models

1. IRFH5200TR2PBF
   • Similar specifications with lower current handling capacity
2. IRFH7200TR2PBF
   • Higher current handling capacity with similar characteristics

In conclusion, the IRFH6200TR2PBF is a high-performance power MOSFET designed for demanding switching applications where efficiency and current-handling capabilities are crucial.

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