SPB02N60S5ATMA1

Product Overview

Category

The SPB02N60S5ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and power applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SPB02N60S5ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels or tubes, with quantities varying based on manufacturer and distributor specifications.

Specifications

• Drain-Source Voltage (VDS): 600V
• Continuous Drain Current (ID): 2A
• On-Resistance (RDS(on)): 1.4Ω
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 6.5nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SPB02N60S5ATMA1 has a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid control of power flow.

Advantages

• Suitable for high voltage applications
• Low power dissipation
• Enhanced efficiency in power management

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The SPB02N60S5ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is commonly used in: - Switching power supplies - Motor control systems - Inverters - LED lighting applications - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to SPB02N60S5ATMA1 include: - IRF840 - FQP30N06L - STP16NF06

In conclusion, the SPB02N60S5ATMA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power applications. Its characteristics, specifications, and application field plans demonstrate its importance in modern electronic systems.

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