IS42S16100E-7TLI-TR

Product Overview

Category

IS42S16100E-7TLI-TR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is commonly used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S16100E-7TLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of IS42S16100E-7TLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16100E-7TLI-TR is typically packaged in reels and comes in quantities of 2500 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Supply Voltage: 3.3V
• Clock Frequency: 143 MHz
• Access Time: 7 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16100E-7TLI-TR is as follows:

1. VDD - Power supply
2. DQ0-DQ15 - Data input/output
3. /CAS - Column address strobe
4. /RAS - Row address strobe
5. /WE - Write enable
6. /CS - Chip select
7. CLK - Clock input
8. VSS - Ground

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• Internal pipelined architecture for improved performance
• On-chip address and data multiplexing for reduced pin count

Advantages and Disadvantages

Advantages

• High-speed data access allows for faster processing in electronic devices.
• Large storage capacity enables the handling of extensive data requirements.
• Low power consumption helps to prolong battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.

Disadvantages

• Sensitive to electrical noise, requiring careful circuit design and shielding.
• Relatively higher cost compared to other memory technologies.
• Limited endurance due to the finite number of write cycles.

Working Principles

IS42S16100E-7TLI-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending row and column addresses to select the desired memory location. The stored charge in the capacitors is read or modified through various control signals such as /CAS, /RAS, /WE, and /CS.

Detailed Application Field Plans

IS42S16100E-7TLI-TR finds applications in a wide range of electronic devices, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS42S16100E-7TLI-TR include: - MT48LC16M16A2P-75: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 75 ns access time. - K4S561632H-UC75: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 75 ns access time. - HYB39S16160T-7: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 7 ns access time.

These alternative models offer similar specifications and functionality to IS42S16100E-7TLI-TR, providing options for different design requirements.

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