IS42S32400B-7B-TR

Product Overview

Category

IS42S32400B-7B-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and mobile devices for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Package

IS42S32400B-7B-TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32400B-7B-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S32400B-7B-TR is typically packaged in trays or reels and is available in various quantities depending on the customer's requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 256 Megabits (32 Megabytes)
• Organization: 4 banks x 4,194,304 words x 16 bits
• Operating Voltage: 2.5V ± 0.2V
• Clock Frequency: 133 MHz
• Access Time: 7 ns
• Burst Length: 1, 2, 4, 8, Full Page
• Refresh Interval: 8K cycles/64 ms
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS42S32400B-7B-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VSS
48. VDD

Functional Features

• High-speed data transfer rate
• Random access capability
• Low power consumption
• Self-refresh mode for power-saving
• Auto precharge and burst length adjustment
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Compact size for space-constrained devices
• Low power consumption for improved battery life
• Wide temperature range operation for versatility
• Reliable performance for critical applications

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to other memory options

Working Principles

IS42S32400B-7B-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed and refreshed using clock signals synchronized with the system bus.

Detailed Application Field Plans

IS42S32400B-7B-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile devices - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS42S32400B-7B-TR include: - MT48LC32M16A2P-75: 512 Megabit SDRAM - K4S561632H-UC75: 256 Megabit SDRAM - AS4C32M16SB-7TCN: 512 Megabit SDRAM - HY57V641620FTP-H: 256 Megabit SDRAM

These alternative models offer similar functionality and can be used as replacements depending on specific requirements.

In conclusion, IS42S32400B-7B-TR is a high-performance SDRAM