IS61NVF51236B-7.5TQLI

Product Overview

Category

IS61NVF51236B-7.5TQLI belongs to the category of non-volatile memory products.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile: The IS61NVF51236B-7.5TQLI retains stored data even when power is disconnected.
• High capacity: This product offers a storage capacity of 512 megabits (64 megabytes).
• Fast access time: With a speed of 7.5 nanoseconds, it ensures quick retrieval of stored data.
• Low power consumption: The IS61NVF51236B-7.5TQLI is designed to minimize energy usage, extending battery life in portable devices.

Package

The IS61NVF51236B-7.5TQLI comes in a compact package, suitable for surface mount technology (SMT) assembly.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

Each package of IS61NVF51236B-7.5TQLI contains 1 unit of the product.

Specifications

• Memory Type: Non-volatile Flash
• Capacity: 512 Megabits (64 Megabytes)
• Access Time: 7.5 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount Technology (SMT)
• Pin Count: 36

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. CE# - Chip enable input
5. OE# - Output enable input
6. WE# - Write enable input
7. I/O0-I/O7 - Data input/output pins
8. RY/BY# - Ready/Busy output
9. WP#/ACC - Write protect or accelerated programming control
10. RESET# - Reset input

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed data access: The IS61NVF51236B-7.5TQLI offers fast read and write operations, enabling efficient data transfer.
• Reliable data retention: This product ensures long-term data storage without the need for constant power supply.
• Low power consumption: With its low energy requirements, the IS61NVF51236B-7.5TQLI helps conserve battery life in portable devices.
• Easy integration: The surface mount package allows for straightforward assembly onto circuit boards.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High capacity provides ample storage space for various applications.
• Fast access time enables quick retrieval of stored data.
• Low power consumption prolongs battery life in electronic devices.

Disadvantages

• Limited storage capacity compared to other non-volatile memory options.
• Relatively higher cost per unit compared to alternative memory technologies.

Working Principles

The IS61NVF51236B-7.5TQLI utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge storage mechanisms to retain information even when power is disconnected. The memory cells are organized into an array, with each cell capable of storing multiple bits of data. Accessing and modifying the stored data is achieved through specific control signals and address inputs.

Detailed Application Field Plans

The IS61NVF51236B-7.5TQLI finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Its high capacity, fast access time, and non-volatile nature make it suitable for storing firmware, operating systems, user data, and other critical information in these devices.

Detailed and Complete Alternative Models

1. IS61NVF25618B-7.5TQLI: A similar product with half the capacity (256 megabits) but otherwise identical specifications.
2. IS61NVF102418B-7.5TQLI: A higher-capacity alternative with double the storage space (1 gigabit) and similar performance characteristics.
3. IS61NVF204836B-7.5TQLI: A larger capacity option with four times the storage space (2 gigabits) while maintaining the same speed and features.

These alternative models provide flexibility in choosing the appropriate memory solution based on specific application requirements.

(Note: Additional