IS61WV51216EDBLL-10BLI-TR

Product Overview

Category

IS61WV51216EDBLL-10BLI-TR belongs to the category of integrated circuits (ICs) and specifically falls under the category of static random-access memory (SRAM) chips.

Use

This product is primarily used for storing data in electronic devices, such as computers, smartphones, and networking equipment. It provides high-speed read and write operations, making it suitable for applications that require fast access to data.

Characteristics

• High-speed operation: The IS61WV51216EDBLL-10BLI-TR offers fast access times, allowing for quick retrieval and storage of data.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it energy-efficient.
• Compact package: The chip is available in a small form factor, enabling its integration into various electronic devices.
• Reliable performance: It provides stable and reliable data storage capabilities, ensuring the integrity of stored information.

Package and Quantity

The IS61WV51216EDBLL-10BLI-TR is typically packaged in a Ball Grid Array (BGA) package. Each package contains one unit of the SRAM chip.

Specifications

• Memory Size: 512 kilobits (64 kilobytes)
• Organization: 512K x 16 bits
• Access Time: 10 nanoseconds
• Operating Voltage: 3.3 volts
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS61WV51216EDBLL-10BLI-TR has a total of 48 pins. Here is a detailed pin configuration:

1. Vcc
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /WE (Write Enable)
19. /OE (Output Enable)
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. I/O4
25. I/O5
26. I/O6
27. I/O7
28. I/O8
29. I/O9
30. I/O10
31. I/O11
32. I/O12
33. I/O13
34. I/O14
35. I/O15
36. Vss
37. NC (No Connection)
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed operation: The IS61WV51216EDBLL-10BLI-TR offers fast access times, allowing for quick data retrieval and storage.
• Low power consumption: It is designed to minimize power usage, making it suitable for battery-powered devices.
• Easy integration: The chip's compact package enables seamless integration into various electronic devices.
• Reliable performance: It provides stable and reliable data storage capabilities, ensuring the integrity of stored information.

Advantages and Disadvantages

Advantages

• Fast access times enable efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into space-constrained designs.
• Reliable performance ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per unit of storage compared to alternative memory options.

Working Principles

The IS61WV51216EDBLL-10BLI-TR is based on static random-access memory (SRAM) technology. It utilizes flip-flop circuits to store and retrieve data. Unlike dynamic RAM (DRAM), SRAM does not require constant refreshing, resulting in faster access times but higher power consumption.

When a read operation is initiated, the desired memory address is provided to the chip, and the corresponding data is retrieved from the internal memory cells. Similarly, during a write operation, the data to be stored is provided along with the target memory address.

Detailed Application Field Plans

The IS61WV51216EDBLL-10BLI-TR can be used in various applications that require high-speed data storage and retrieval. Some potential application fields include:

1. Computers and Servers: The SRAM chip can be utilized as cache memory to improve system performance by providing fast access to frequently accessed data.
2. Networking Equipment: It can be employed in routers, switches, and network cards