IS62WV12816ALL-70BLI-TR

Product Overview

Category

IS62WV12816ALL-70BLI-TR belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Reliable performance

Package

IS62WV12816ALL-70BLI-TR is available in a compact package that ensures easy integration into various electronic systems.

Essence

The essence of IS62WV12816ALL-70BLI-TR lies in its ability to provide efficient and reliable memory storage for electronic devices.

Packaging/Quantity

IS62WV12816ALL-70BLI-TR is typically packaged in reels or trays, with each package containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Model: IS62WV12816ALL-70BLI-TR
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 128 megabits (16 megabytes)
• Operating Voltage: 3.3V
• Speed: 70 nanoseconds (ns)
• Interface: Parallel
• Pin Count: 48

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data input/output lines
5. WE - Write enable
6. OE - Output enable
7. CE1, CE2 - Chip enable signals
8. UB/LB - Byte control signals
9. CLK - Clock input
10. NC - No connection (reserved pin)

(Note: This is a simplified representation of the pin configuration. Please refer to the product datasheet for a complete and accurate pinout diagram.)

Functional Features

• High-speed data access
• Non-volatile storage
• Low power consumption
• Easy integration into electronic systems
• Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Non-volatile storage ensures data retention even during power loss.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance in different environmental conditions.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited storage capacity compared to some newer memory technologies.
• Requires additional circuitry for interfacing with modern microprocessors.

Working Principles

IS62WV12816ALL-70BLI-TR operates based on the principles of static random access memory (SRAM). It utilizes flip-flop circuits to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

IS62WV12816ALL-70BLI-TR finds applications in various electronic devices, including but not limited to: - Computers and servers - Networking equipment - Industrial control systems - Automotive electronics - Consumer electronics

Its high-speed data access, reliability, and low power consumption make it suitable for these fields.

Detailed and Complete Alternative Models

1. IS62WV25616BLL-55TLI: 256 megabit SRAM, 55 ns speed, parallel interface.
2. IS62WV51216BLL-25TLI: 512 megabit SRAM, 25 ns speed, parallel interface.
3. IS62WV102416BLL-12TLI: 1 gigabit SRAM, 12 ns speed, parallel interface.

(Note: This is just a sample list of alternative models. There are several other options available in the market.)

In conclusion, IS62WV12816ALL-70BLI-TR is a reliable and efficient memory product that offers high-speed data access, low power consumption, and non-volatile storage capabilities. It finds applications in various electronic devices across different industries.