IS66WV1M16EBLL-55BLI-TR

Product Overview

Category

IS66WV1M16EBLL-55BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation: The IS66WV1M16EBLL-55BLI-TR offers fast read and write speeds, allowing for efficient data processing.
• Large storage capacity: With a capacity of 1 megabit (1M), this memory device can store a significant amount of data.
• Low power consumption: The IS66WV1M16EBLL-55BLI-TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: This product comes in a small form factor, enabling its integration into space-constrained electronic devices.
• Reliable performance: The IS66WV1M16EBLL-55BLI-TR is known for its durability and stable operation over extended periods.

Package and Quantity

The IS66WV1M16EBLL-55BLI-TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Access Time: 55 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The IS66WV1M16EBLL-55BLI-TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /CE2
37. /CE1
38. /CE0
39. /UB
40. /LB
41. /BYTE
42. /ADSC
43. /RDY
44. /ZZ
45. NC
46. GND
47. GND
48. VCC

Functional Features

• Random Access: The IS66WV1M16EBLL-55BLI-TR allows for random access to any memory location, enabling efficient data retrieval.
• Byte-Writable: This memory device supports byte-level write operations, providing flexibility in data manipulation.
• Low Power Standby: In standby mode, the IS66WV1M16EBLL-55BLI-TR consumes minimal power, conserving energy in battery-powered devices.
• Automatic Refresh: The product incorporates an automatic refresh mechanism to maintain data integrity over time.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for integration into space-constrained designs.
• Reliable performance ensures stable operation over extended periods.

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash.
• Relatively higher cost per unit compared to some alternative memory solutions.

Working Principles

The IS66WV1M16EBLL-55BLI-TR is based on Static Random Access Memory (SRAM) technology. It utilizes flip-flops to store each bit of data, allowing for fast read and write operations. The memory cells retain their state as long as power is supplied, eliminating the need for constant refreshing.

Detailed Application Field Plans

The IS66WV1M16EBLL-55BLI-TR finds applications in various electronic devices, including but not limited to: - Computers and servers - Smartphones and tablets - Networking equipment - Automotive electronics - Industrial control systems - Medical devices