IS66WVE2M16TCLL-70BLI-TR

Product Overview

Category

IS66WVE2M16TCLL-70BLI-TR belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Compact size
• Reliable performance

Package

IS66WVE2M16TCLL-70BLI-TR is available in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of IS66WVE2M16TCLL-70BLI-TR lies in its ability to provide efficient and reliable data storage capabilities.

Packaging/Quantity

This product is typically packaged in reels or trays, with a specific quantity per package depending on the manufacturer's specifications.

Specifications

• Model: IS66WVE2M16TCLL-70BLI-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 2 Megabytes (16 Megabits)
• Operating Voltage: 3.3V
• Speed Grade: 70BLI
• Temperature Range: Commercial (0°C to 70°C)
• Interface: Parallel
• Pin Count: 48

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. /CAS
19. /RAS
20. /WE
21. /CS
22. /OE
23. A0
24. A1
25. A2
26. A3
27. A4
28. A5
29. A6
30. A7
31. A8
32. A9
33. A10
34. A11
35. A12
36. A13
37. A14
38. A15
39. VSS
40. VSS
41. VSS
42. VSS
43. VDDQ
44. VDDQ
45. VDDQ
46. VDDQ
47. NC
48. NC

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low power standby mode
• Easy integration with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data
• Fast data access speed enables quick retrieval of information
• Low power consumption helps in conserving energy
• Compact size facilitates integration into space-constrained devices
• Reliable performance ensures data integrity and system stability

Disadvantages

• Limited capacity compared to other memory technologies like NAND flash
• Relatively higher cost per unit compared to some alternative memory solutions

Working Principles

IS66WVE2M16TCLL-70BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the host device. The memory cells store data as charge levels, which are periodically refreshed to maintain data integrity.

Detailed Application Field Plans

IS66WVE2M16TCLL-70BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Consumer electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS66WVE2M16TCLL-70BLI-TR include: - IS66WVE2M16DCLL-70BLI-TR - IS66WVE2M16BCLL-70BLI-TR - IS66WVE2M16ECLL-70BLI-TR - IS66WVE2M16FCLL-70BLI-TR

These models offer similar functionality and characteristics, providing options for different requirements and preferences.

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