The IXFP12N65X2 features a standard TO-220 pin configuration with three pins: gate (G), drain (D), and source (S).
| Pin | Description | |-----|-------------| | G | Gate | | D | Drain | | S | Source |
The IXFP12N65X2 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate terminal, it creates an electric field that allows current to flow between the drain and source, enabling high-power switching applications.
The IXFP12N65X2 is well-suited for a wide range of high-power applications, including: - Switch-mode power supplies - Motor drives - Inverters - Industrial equipment - Renewable energy systems
In conclusion, the IXFP12N65X2 is a high-voltage, high-current Power MOSFET designed for efficient power management in various high-power switching applications. Its robust design, fast switching speed, and low on-state resistance make it a suitable choice for demanding power electronics applications.
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What is the maximum drain-source voltage rating of IXFP12N65X2?
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What is the typical on-state resistance of IXFP12N65X2?
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