IXFT120N25X3HV

Product Overview

• Category: Power MOSFET
• Use: High voltage, high power applications
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-268
• Essence: Power management
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Voltage Rating: 250V
• Current Rating: 120A
• On-Resistance: 0.025Ω
• Gate Charge: 120nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• High voltage capability for demanding applications
• Low on-resistance minimizes power loss
• Fast switching speed for efficient operation

Advantages and Disadvantages

Advantages

• Suitable for high voltage, high power applications
• Low on-resistance enhances efficiency
• Fast switching speed improves performance

Disadvantages

• May require additional heat dissipation in high-power applications
• Higher cost compared to lower voltage MOSFETs

Working Principles

The IXFT120N25X3HV operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in high voltage circuits.

Detailed Application Field Plans

This MOSFET is ideal for use in high voltage power supplies, motor drives, and other applications requiring high power handling and efficient switching.

Detailed and Complete Alternative Models

• IXFN120N25X3
• IRFP4668PBF
• STW120NF10

Note: The above alternative models are provided for reference and may have different specifications.

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This entry provides comprehensive information about the IXFT120N25X3HV Power MOSFET, including its basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.