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IXGT35N120B
Product Overview
Category: Power semiconductor device
Use: High-power switching applications
Characteristics: High voltage, high current capability
Package: TO-268
Essence: Efficient power control
Packaging/Quantity: Single unit
Specifications
- Voltage Rating: 1200V
- Current Rating: 35A
- Package Type: TO-268
- Mounting Type: Through Hole
- Configuration: Single
Detailed Pin Configuration
- Gate
- Collector
- Emitter
Functional Features
- High voltage capability
- Low on-state voltage
- Fast switching speed
- Low switching losses
Advantages and Disadvantages
Advantages: - High power handling capability - Low conduction losses - Fast switching speed
Disadvantages: - High switching losses - Requires careful thermal management
Working Principles
The IXGT35N120B is a high-voltage insulated gate bipolar transistor (IGBT) designed for high-power switching applications. It operates by controlling the flow of current between the collector and emitter using the gate signal.
Detailed Application Field Plans
The IXGT35N120B is commonly used in: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Induction heating - Welding equipment
Detailed and Complete Alternative Models
- IXGH35N120B
- IRG7PH35UD1PBF
- FGA35N120ANTD
In conclusion, the IXGT35N120B is a high-voltage IGBT suitable for various high-power switching applications. Its efficient power control, high voltage and current capabilities, and fast switching speed make it an ideal choice for demanding industrial and commercial applications.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IXGT35N120B trong giải pháp kỹ thuật
What is the maximum voltage rating of IXGT35N120B?
- The maximum voltage rating of IXGT35N120B is 1200V.
What is the maximum current rating of IXGT35N120B?
- The maximum current rating of IXGT35N120B is 35A.
What type of package does IXGT35N120B come in?
- IXGT35N120B comes in a TO-268 package.
What are the typical applications for IXGT35N120B?
- IXGT35N120B is commonly used in applications such as motor drives, inverters, and power supplies.
What is the on-state voltage drop of IXGT35N120B?
- The on-state voltage drop of IXGT35N120B is typically around 2.2V at 35A.
Does IXGT35N120B have built-in protection features?
- No, IXGT35N120B does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the maximum junction temperature of IXGT35N120B?
- The maximum junction temperature of IXGT35N120B is 150°C.
Is IXGT35N120B suitable for high-frequency switching applications?
- Yes, IXGT35N120B is suitable for high-frequency switching due to its fast switching characteristics.
What is the gate threshold voltage of IXGT35N120B?
- The gate threshold voltage of IXGT35N120B is typically around 3V.
Can IXGT35N120B be used in parallel to increase current handling capability?
- Yes, IXGT35N120B can be used in parallel to increase the overall current handling capability in a system.