IXTX90N25L2

Product Overview

Category

The IXTX90N25L2 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage, high-speed switching device in various electronic circuits and power applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The IXTX90N25L2 is typically available in a TO-268 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 250V
• Continuous Drain Current (ID): 90A
• On-Resistance (RDS(on)): 0.09Ω
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 100nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The IXTX90N25L2 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid control of power flow.

Advantages

• Suitable for high-power applications
• Low on-resistance reduces conduction losses
• Fast switching speed enhances overall system performance

Disadvantages

• Higher gate capacitance may require careful driver design
• Sensitivity to overvoltage conditions

Working Principles

The IXTX90N25L2 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXTX90N25L2 is commonly used in the following applications: - Switched-mode power supplies - Motor control - Inverters - Power factor correction circuits

Detailed and Complete Alternative Models

Some alternative models to the IXTX90N25L2 include: - IRFP4668PBF - FDPF33N25T - STW45NM50FD

In conclusion, the IXTX90N25L2 is a high-voltage power MOSFET with excellent characteristics for power management and control applications. Its high voltage capability, low on-resistance, and fast switching speed make it a valuable component in various electronic systems.

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