LTC4446IMS8E#PBF

Product Overview

• Category: Integrated Circuit (IC)
• Use: Power Management
• Characteristics: High-Speed, High-Voltage Gate Driver
• Package: MSOP-8
• Essence: Efficiently drives high-side and low-side N-channel power MOSFETs in a wide range of applications
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Supply Voltage Range: 4.5V to 18V
• Gate Drive Voltage Range: 4.5V to 18V
• Maximum Output Current: ±4A
• Rise/Fall Time: 10ns/7ns
• Operating Temperature Range: -40°C to 125°C

Detailed Pin Configuration

1. VCC: Supply voltage input
2. GND: Ground reference
3. IN: Logic input for driving the high-side MOSFET
4. SD: Shutdown pin for disabling the driver
5. LO: Logic output for driving the low-side MOSFET
6. HO: High-side gate driver output
7. LIN: Logic input for driving the low-side MOSFET
8. VB: Bootstrap supply voltage input for the high-side driver

Functional Features

• High-Speed Operation: Enables efficient switching of power MOSFETs at high frequencies
• Wide Input Voltage Range: Allows compatibility with various power supply voltages
• Adaptive Shoot-Through Protection: Prevents simultaneous conduction of high-side and low-side MOSFETs
• Low Propagation Delay: Minimizes dead time between high-side and low-side switching
• Undervoltage Lockout: Ensures proper operation under low voltage conditions

Advantages and Disadvantages

Advantages: - Fast switching speed improves overall system efficiency - Wide input voltage range enhances versatility - Adaptive shoot-through protection prevents MOSFET damage - Low propagation delay minimizes power losses

Disadvantages: - Limited maximum output current may restrict use in high-power applications - Operating temperature range may not be suitable for extreme environments

Working Principles

The LTC4446IMS8E#PBF is a high-speed, high-voltage gate driver IC designed to efficiently drive N-channel power MOSFETs. It operates by receiving logic inputs and generating corresponding gate drive signals for the high-side and low-side MOSFETs. The adaptive shoot-through protection ensures that both MOSFETs do not conduct simultaneously, preventing potential damage.

Detailed Application Field Plans

The LTC4446IMS8E#PBF finds applications in various fields, including but not limited to: 1. Switching Power Supplies 2. Motor Control Systems 3. LED Lighting 4. Class-D Audio Amplifiers 5. DC-DC Converters 6. Solar Power Systems

Detailed and Complete Alternative Models

1. LTC4446IMS8E#TRPBF: Same specifications and features as LTC4446IMS8E#PBF, but packaged in a tape & reel format with 3000 units per reel.
2. LTC4446IMS8E#TRMPBF: Same specifications and features as LTC4446IMS8E#PBF, but packaged in a tape & reel format with 1000 units per reel.
3. LTC4446IMS8E#TRRPBF: Same specifications and features as LTC4446IMS8E#PBF, but packaged in a tape & reel format with 500 units per reel.

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