DS1005S-200+ Encyclopedia Entry

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Wide Frequency Range
Package: TO-39 Metal Can
Essence: Bipolar Transistor
Packaging/Quantity: 1 piece per package

Specifications

• Model Number: DS1005S-200+
• Type: NPN
• Maximum Collector Current (Ic): 200 mA
• Maximum Collector-Emitter Voltage (Vceo): 30 V
• Maximum Power Dissipation (Pd): 300 mW
• Transition Frequency (ft): 250 MHz
• Noise Figure (NF): 2 dB
• Operating Temperature Range: -55°C to +150°C

Pin Configuration

The DS1005S-200+ transistor has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

• High gain amplification of weak signals
• Wide frequency range for versatile applications
• Low noise figure for improved signal quality
• Suitable for small-signal amplification in various electronic circuits

Advantages

• Compact TO-39 metal can package for easy integration
• High gain allows amplification of low-level signals
• Wide frequency range enables use in a variety of applications
• Low noise figure ensures minimal signal distortion

Disadvantages

• Limited maximum collector current may restrict usage in high-power applications
• Relatively low power dissipation capability compared to other transistors

Working Principles

The DS1005S-200+ is a bipolar transistor that operates based on the principles of amplification and control of electric current. It consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small current to the base terminal, the transistor allows a larger current to flow between the collector and emitter terminals, amplifying the input signal.

Application Field Plans

The DS1005S-200+ transistor finds applications in various electronic circuits that require small-signal amplification. Some potential application fields include: 1. Audio Amplifiers 2. Radio Frequency (RF) Receivers 3. Oscillators 4. Communication Systems 5. Test and Measurement Equipment

Alternative Models

1. BC547: NPN Transistor, 100 mA Collector Current, 45 V Collector-Emitter Voltage
2. 2N3904: NPN Transistor, 200 mA Collector Current, 40 V Collector-Emitter Voltage
3. MPSA18: NPN Darlington Transistor, 500 mA Collector Current, 45 V Collector-Emitter Voltage

These alternative models offer similar functionality and can be used as substitutes for the DS1005S-200+ in appropriate applications.

In conclusion, the DS1005S-200+ is a versatile bipolar transistor designed for small-signal amplification in various electronic circuits. Its high gain, wide frequency range, and low noise figure make it suitable for applications requiring signal amplification with minimal distortion. While it has limitations in terms of maximum collector current and power dissipation, alternative models are available to meet specific requirements.