24FC256T-I/MNY

Product Overview

Category

The 24FC256T-I/MNY belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is primarily used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• High storage capacity: The 24FC256T-I/MNY has a storage capacity of 256 kilobits (32 kilobytes).
• Low power consumption: It operates at low voltage and consumes minimal power.
• Fast access time: Provides quick access to stored data.

Package

The 24FC256T-I/MNY is available in a small surface-mount package, which ensures easy integration into electronic circuits.

Essence

The essence of this product lies in its ability to store and retrieve data reliably, making it an essential component for many electronic devices.

Packaging/Quantity

The 24FC256T-I/MNY is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Storage Capacity: 256 kilobits (32 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million write cycles
• Data Retention: Up to 200 years

Detailed Pin Configuration

The 24FC256T-I/MNY has a total of 8 pins, each serving a specific purpose:

1. VCC: Power supply input
2. SDA: Serial data input/output for I2C communication
3. SCL: Serial clock input for I2C communication
4. WP: Write protect pin (optional)
5. A0, A1, A2: Address selection pins for device addressing
6. GND: Ground connection

Functional Features

• Random access: Allows reading and writing of data at any memory location.
• Page write mode: Enables faster data writes by allowing multiple bytes to be written in a single operation.
• Software write protection: Provides the option to protect specific memory areas from being overwritten.
• Sequential read mode: Facilitates efficient retrieval of consecutive data bytes.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity even during power loss.
• Electrically erasable nature allows for easy reprogramming.
• High storage capacity accommodates a wide range of applications.
• Low power consumption prolongs battery life in portable devices.
• Fast access time enhances overall system performance.

Disadvantages

• Limited endurance: Frequent write operations may reduce the lifespan of the chip.
• Relatively small storage capacity compared to other memory technologies.
• Requires an external microcontroller or interface for data manipulation.

Working Principles

The 24FC256T-I/MNY utilizes electrically controlled floating gate transistors to store data. When data is written, charge is trapped in the floating gate, altering the transistor's behavior. This trapped charge can be sensed during read operations, allowing the stored data to be retrieved accurately.

Detailed Application Field Plans

The 24FC256T-I/MNY finds application in various fields, including: 1. Embedded systems: Used for firmware storage in microcontrollers and IoT devices. 2. Automotive electronics: Stores critical data like calibration settings and vehicle parameters. 3. Consumer electronics: Enables non-volatile storage in devices like smart TVs, set-top boxes, and gaming consoles. 4. Industrial automation: Used for storing configuration data and system parameters in control systems.

Detailed and Complete Alternative Models

1. 24LC256: Similar EEPROM chip with the same storage capacity and I2C interface.
2. AT24C256: EEPROM chip from Atmel (now Microchip) with comparable specifications.
3. M24C256: EEPROM chip from STMicroelectronics offering similar features and performance.

These alternative models provide similar functionality and can be used as substitutes for the 24FC256T-I/MNY depending on specific requirements.

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