JS28F512M29AWLB TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-speed, reliable, and durable
• Package: Small form factor package (e.g., BGA)
• Essence: Stores data even when power is turned off
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 512 Megabits (64 Megabytes)
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Access Time: 70 ns
• Erase/Program Cycles: 100,000 cycles
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The JS28F512M29AWLB TR flash memory module has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control signal
6. CE#: Chip enable control signal
7. OE#: Output enable control signal
8. RP#/BYTE#: Reset/byte enable control signal
9. RY/BY#: Ready/busy status output
10. WP#/ACC: Write protect/control signal
11. VPP: Programming voltage supply
12. NC: No connection

Functional Features

• High-speed read and write operations
• Reliable and durable data storage
• Low power consumption
• Built-in error correction codes (ECC) for data integrity
• Block erase and sector erase capabilities
• Software and hardware protection mechanisms

Advantages and Disadvantages

Advantages: - Fast access times - High storage capacity - Non-volatile memory - Low power consumption - Reliable and durable

Disadvantages: - Limited erase/program cycles - Higher cost compared to other memory technologies - Requires specialized programming equipment

Working Principles

The JS28F512M29AWLB TR flash memory utilizes a floating gate transistor structure to store data. When a voltage is applied, electrons are trapped in the floating gate, altering the transistor's threshold voltage. This change in threshold voltage determines whether the transistor is in a programmed or erased state, representing binary data.

Detailed Application Field Plans

The JS28F512M29AWLB TR flash memory module finds applications in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems
7. Embedded systems

Detailed and Complete Alternative Models

1. JS28F256M29EWHA TR
2. JS28F128M29EWHB TR
3. JS28F064M29EWHC TR
4. JS28F032M29EWHI TR
5. JS28F016M29EWHJ TR
6. JS28F008M29EWHK TR
7. JS28F004M29EWHM TR
8. JS28F002M29EWHN TR

These alternative models offer varying capacities and features to suit different application requirements.

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