JS28F512M29EWLB TR

Product Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Reliable and durable
• Package: EWLB (Embedded Wafer-Level Ball Grid Array)
• Essence: Advanced flash memory technology
• Packaging/Quantity: Varies depending on manufacturer and customer requirements

Specifications

• Capacity: 512 megabits (64 megabytes)
• Interface: Parallel
• Voltage: 2.7V to 3.6V
• Access Time: 70 ns
• Erase/Program Cycles: 100,000 cycles
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The JS28F512M29EWLB TR flash memory module has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RY/BY#: Ready/busy status output
9. WP#: Write protect control
10. RESET#: Reset control

Functional Features

• High-speed data transfer
• Low power consumption
• Error correction capabilities
• Block erase and sector erase options
• Hardware and software protection mechanisms

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read and write speeds - Reliable and durable - Low power consumption

Disadvantages: - Limited erase and program cycles - Relatively high cost compared to other memory technologies

Working Principles

The JS28F512M29EWLB TR flash memory operates based on the principles of floating gate transistors. It uses a grid of memory cells, where each cell can store multiple bits of data by trapping electrons in the floating gate. The presence or absence of trapped electrons determines the stored data value.

During read operations, the memory controller applies appropriate voltages to the address lines and activates the chip enable (CE#) and output enable (OE#) signals. The selected memory cell's contents are then read and transferred to the data output lines.

During write operations, the memory controller applies appropriate voltages to the address lines, data input lines, and control signals. The data is programmed into the selected memory cell by injecting or removing electrons from the floating gate.

Detailed Application Field Plans

The JS28F512M29EWLB TR flash memory module finds applications in various electronic devices, including but not limited to:

1. Smartphones and tablets
2. Digital cameras
3. Solid-state drives (SSDs)
4. Automotive electronics
5. Industrial control systems
6. Embedded systems
7. Gaming consoles
8. Networking equipment

Its high capacity, fast access times, and reliability make it suitable for storing firmware, operating systems, application code, and other critical data in these devices.

Detailed and Complete Alternative Models

1. JS28F256M29EWLB TR: 256 megabit flash memory module with similar specifications
2. JS28F102K29EWLB TR: 1 gigabit flash memory module with higher capacity
3. JS28F064M29EWLB TR: 64 megabit flash memory module with lower capacity
4. JS28F512M29EWHB TR: Similar flash memory module with different package type (WHB)

These alternative models offer different capacities and package options to cater to specific requirements of various applications.

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