JS28F640J3F75D TR

Product Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Memory Type: NOR Flash
• Memory Size: 64 Megabits (8 Megabytes)
• Organization: 8-bit
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Time: 2 ms (typical)
• Endurance: 100,000 cycles (minimum)

Detailed Pin Configuration

The JS28F640J3F75D TR has the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. WP#
48. VSS

Functional Features

• High-speed read and write operations for efficient data access.
• Reliable non-volatile memory that retains data even when power is disconnected.
• Large storage capacity suitable for storing various types of data.
• Low power consumption, making it ideal for battery-powered devices.
• Built-in protection features to prevent accidental data corruption.

Advantages and Disadvantages

Advantages: - Fast read and write operations enable quick data access. - Non-volatile memory ensures data retention without the need for power. - Large storage capacity allows for ample data storage. - Low power consumption prolongs battery life in portable devices.

Disadvantages: - Limited endurance with a maximum of 100,000 erase/write cycles. - Higher cost compared to other types of memory technologies. - Parallel interface may limit compatibility with certain systems.

Working Principles

The JS28F640J3F75D TR utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is detected, allowing retrieval of the information. The parallel interface facilitates fast data transfer between the memory and the host device.

Detailed Application Field Plans

The JS28F640J3F75D TR is commonly used in various electronic devices, including:

1. Embedded Systems: Used as a storage medium for firmware and operating systems.
2. Consumer Electronics: Enables data storage in devices such as digital cameras, MP3 players, and set-top boxes.
3. Automotive Applications: Provides reliable storage for infotainment systems, navigation units, and instrument clusters.
4. Industrial Control Systems: Used for data logging, configuration storage, and firmware updates in industrial equipment.

Detailed and Complete Alternative Models

1. JS28F640J3D75D TR
2. JS28F640J3C75D TR
3. JS28F640J3B75D TR
4. JS28F640J3A75D TR
5. JS28F640J3E75D TR

These alternative models offer similar specifications and functionality to the JS28F640J3F75D TR, providing options for different application requirements.

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