M29F160FB55N3E2

Product Overview

Category

M29F160FB55N3E2 belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High storage capacity: M29F160FB55N3E2 has a capacity of 16 megabits (2 megabytes).
• Fast read and write operations: This flash memory offers high-speed data access.
• Reliable performance: It ensures data integrity and durability.

Package

M29F160FB55N3E2 is available in a compact and industry-standard package, making it compatible with a wide range of devices.

Essence

The essence of M29F160FB55N3E2 lies in its ability to provide reliable and high-capacity data storage in electronic devices.

Packaging/Quantity

This flash memory is typically packaged in trays or reels, and the quantity per package can vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NOR Flash
• Capacity: 16 Megabits (2 Megabytes)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 55 ns

Detailed Pin Configuration

The pin configuration of M29F160FB55N3E2 is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#/BYTE#: Reset/Byte enable
8. RY/BY#: Ready/Busy status
9. VSS: Ground

Functional Features

• Erase and Program Operations: M29F160FB55N3E2 supports both sector erase and byte program operations, allowing flexible data manipulation.
• Block Locking: It provides the option to protect specific blocks of memory from being erased or programmed.
• Automatic Page Write: This flash memory allows efficient programming of multiple bytes in a single operation.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications
• Fast read and write operations for quick data access
• Reliable performance with data integrity and durability
• Flexible block locking feature for enhanced security

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

M29F160FB55N3E2 utilizes NOR flash technology, which stores data in individual memory cells using floating-gate transistors. These transistors can trap electrical charges, representing binary values (0s and 1s). The data can be read, erased, and programmed by applying appropriate voltage levels to the control pins.

Detailed Application Field Plans

M29F160FB55N3E2 finds extensive application in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to M29F160FB55N3E2 that offer similar functionality and specifications include: - M29F160FB55N3E1 - M29F160FB55N3E3 - M29F160FB55N3E4 - M29F160FB55N3E5

These models are compatible replacements and can be chosen based on availability and specific requirements.

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