M29W400DB70N6E

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High capacity, non-volatile, flash memory
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Non-volatile memory storage for electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 4 Megabits (512 Kbytes x 8 bits)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Page Size: 256 bytes
• Block Erase Size: 64 Kbytes
• Write/Erase Endurance: 100,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The M29W400DB70N6E has a total of 48 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. A19 - Address Input
21. A20 - Address Input
22. A21 - Address Input
23. A22 - Address Input
24. A23 - Address Input
25. A24 - Address Input
26. A25 - Address Input
27. ALE - Address Latch Enable
28. CE - Chip Enable
29. WE - Write Enable
30. OE - Output Enable
31. BYTE# - Byte Selection Input
32. DQ0 - Data Input/Output
33. DQ1 - Data Input/Output
34. DQ2 - Data Input/Output
35. DQ3 - Data Input/Output
36. DQ4 - Data Input/Output
37. DQ5 - Data Input/Output
38. DQ6 - Data Input/Output
39. DQ7 - Data Input/Output
40. VCC - Power Supply
41. GND - Ground
42. RP - Ready/Busy Output
43. RESET# - Reset Input
44. WP# - Write Protect Input
45. NC - No Connection
46. NC - No Connection
47. NC - No Connection
48. NC - No Connection

Functional Features

• Non-volatile memory: Retains data even when power is removed
• High capacity: 4 Megabits of storage space
• Fast access time: 70 ns for quick data retrieval
• Page-level programming: Allows simultaneous programming of multiple bytes
• Block erase capability: Erases large blocks of data at once
• Low power consumption: Operates within a wide voltage range (2.7V to 3.6V)

Advantages and Disadvantages

Advantages: - High storage capacity - Non-volatile memory ensures data retention - Fast access time for quick data retrieval - Page-level programming enables efficient data programming - Block erase capability simplifies data erasure - Wide operating voltage range allows flexibility in usage

Disadvantages: - Limited endurance of 100,000 write/erase cycles - Requires external power supply and control circuitry

Working Principles

The M29W400DB70N6E is based on flash memory technology. It utilizes a grid of memory cells that can be electrically programmed and erased. The memory cells store data as electrical charges, which are trapped within floating gate transistors. When a specific address is accessed, the corresponding memory cell's charge is read or modified.

To program data, an electrical charge is applied to the floating gate transistor, trapping electrons and altering its conductive properties. Erasing data involves removing the trapped charge from the floating gate transistor, resetting it to its initial state.

Detailed Application Field Plans

The M29W400DB70N6E is commonly used in various electronic devices that require non-volatile memory storage. Some application fields include:

1. Consumer Electronics: Used in digital cameras, MP3