M58WR064KB70ZB6F TR

Product Overview

Category

M58WR064KB70ZB6F TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in M58WR064KB70ZB6F TR is retained even when power is turned off.
• High capacity: This device offers a storage capacity of 64 kilobytes.
• Fast access time: M58WR064KB70ZB6F TR provides quick access to stored data.
• Reliable: It ensures data integrity and durability.

Package

M58WR064KB70ZB6F TR comes in a compact package designed for easy integration into electronic circuits.

Essence

The essence of this product lies in its ability to store and retrieve data reliably and efficiently.

Packaging/Quantity

M58WR064KB70ZB6F TR is typically packaged in reels or trays, with each reel containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 kilobytes
• Interface: Parallel
• Supply Voltage: 3.3V
• Access Time: <10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: >10 years

Detailed Pin Configuration

The pin configuration of M58WR064KB70ZB6F TR is as follows:

1. VCC (Power supply)
2. GND (Ground)
3. A0-A15 (Address inputs)
4. DQ0-DQ7 (Data inputs/outputs)
5. WE (Write enable)
6. OE (Output enable)
7. CE (Chip enable)
8. WP (Write protect)
9. RY/BY (Ready/busy)

Functional Features

• High-speed read and write operations
• Low power consumption
• Automatic sleep mode for power saving
• Built-in error correction code (ECC) for data integrity
• Multiple chip enable options for flexible memory organization

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Flexible memory organization

Disadvantages

• Limited write endurance
• Higher cost compared to other memory technologies

Working Principles

M58WR064KB70ZB6F TR is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. During read operations, the stored charges are detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

M58WR064KB70ZB6F TR finds applications in various electronic devices, including: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Automotive systems - Industrial control systems

Detailed and Complete Alternative Models

1. M58WR032KB70ZB6F TR: 32 kilobytes storage capacity, similar specifications.
2. M58WR128KT70ZB6F TR: 128 kilobytes storage capacity, similar specifications.
3. M58WR256KB70ZB6F TR: 256 kilobytes storage capacity, similar specifications.

These alternative models offer different storage capacities while maintaining similar functionality and characteristics to M58WR064KB70ZB6F TR.

In conclusion, M58WR064KB70ZB6F TR is a non-volatile memory device with a high storage capacity, fast access time, and reliable data retention. It finds applications in various electronic devices and offers several alternative models with different storage capacities.