MT25TL256HAA1ESF-0AAT TR

Product Overview

Category

MT25TL256HAA1ESF-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: The MT25TL256HAA1ESF-0AAT TR offers a storage capacity of 256 megabits (32 megabytes).
• Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
• Low power consumption: This memory device is designed to consume minimal power during operation.
• Reliable: It offers high endurance and data retention capabilities, ensuring long-term reliability.
• Compact package: The MT25TL256HAA1ESF-0AAT TR is available in a small form factor, making it suitable for space-constrained applications.

Package and Quantity

The MT25TL256HAA1ESF-0AAT TR is packaged in a surface-mount technology (SMT) package. It is typically supplied in reels or trays, with a quantity of 2500 units per reel.

Specifications

• Memory Type: NOR Flash
• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles
• Package Type: 8-pin SOIC (Small Outline Integrated Circuit)

Pin Configuration

The MT25TL256HAA1ESF-0AAT TR has the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | CS# | Chip Select (Active Low) | | 2 | SO | Serial Data Output | | 3 | WP# | Write Protect (Active Low) | | 4 | GND | Ground | | 5 | SI | Serial Data Input | | 6 | SCK | Serial Clock | | 7 | VCC | Power Supply (2.7V - 3.6V) | | 8 | HOLD# | Hold (Active Low) |

Functional Features

• Fast Read and Write Operations: The MT25TL256HAA1ESF-0AAT TR offers high-speed data transfer, enabling quick access to stored information.
• Sector Erase and Program: It supports sector-based erase and program operations, allowing efficient management of data.
• Protection Mechanisms: This memory device includes hardware and software protection features to prevent unauthorized access or modification of data.
• Error Correction Code (ECC): ECC functionality is integrated into the device to ensure data integrity and reliability.
• Deep Power-Down Mode: The MT25TL256HAA1ESF-0AAT TR can enter a low-power deep power-down mode when not in use, further reducing power consumption.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable and durable
• Compact form factor

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited write endurance compared to some alternative models

Working Principles

The MT25TL256HAA1ESF-0AAT TR utilizes NOR flash memory technology. It stores data in a grid of memory cells, where each cell represents a bit of information. The memory cells are organized into sectors, allowing for efficient read, write, and erase operations. When data is written to the memory, it is stored by changing the electrical charge of the memory cells. Reading data involves detecting the charge state of the memory cells.

Application Field Plans

The MT25TL256HAA1ESF-0AAT TR is widely used in various applications, including: - Mobile devices (smartphones, tablets) - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems - Medical devices

Alternative Models

Some alternative models that offer similar functionality to the MT25TL256HAA1ESF-0AAT TR include: - MT25QL256ABA1EW7-0SIT - S25FL256SAGNFI001 - W25Q256JVSIQ

These models provide comparable storage capacity, interface compatibility, and performance characteristics.

In conclusion, the MT25TL256HAA1ESF